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 Awards List
－2011－
Publication
- K. Tomida, K. Kita, and A. Toriumi,
"Higher-k Scalability and Leakage Current Reduction of SiO2-Doped
HfO2 in Direct Tunneling Regime",
Japanese Journal of Applied Physics, 50 (2011) 111502,
published online Oct. 27, 2011
- S. k. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi,
"Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction"
Japanese Journal of Applied Physics, 50 (2011) 10PE04-1,
published online Oct. 20, 2011
- A. Toriumi, Y. Nakajima and K. Kita ,
"Opportunity for Phase-controlled Higher-k HfO2",
ECS Transactions, 41 (7) 125-136 (2011),Oct. 2011
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K. Nagashio, T. Yamashita, T. Nishimura,
K. Kita and A. Toriumi,
"Electrical transport properties of graphene on SiO2 with specific
surfacestructures",
Journal of Applied Physics, 110, 024513 (2011),
published online Jul. 29, 2011
- K. Nagashio, A. Toriumi,
"Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors",
Japanese Journal of Applied Physics, 50 (2011) 070108,
published online Jul. 20, 2011
- T. Nishimura, C.H. Lee, T. Tabata, S.K. Wang, K. Nagashio, K. Kita and
A. Toriumi,
"High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect
Transistors with High-Pressure Oxidized Y2O3",
Applied Physics Express, 4 (2011)064201,
published online Jun. 2, 2011
- A. Toriumi, C. H. Lee, T. Nishimura, S. K. Wang, K. Kita, and K. Nagashio,
"Recent progress of Ge technology for a post-Si CMOS",
ECS Transactions 35(3) 443-456, May 2011
- D. D. Zhao, T. Nishimura, C. H. Lee, R. Ifuku, K. Nagashio, K. Kita, and
A. Toriumi,
"Junctionless Ge MOSFETs Fabricated on 10 nm-Thick GeOI Substrate",
ECS Transactions 35(3) 457-464, May 2011
- 長汐晃輔，鳥海明,
“グラフェントランジスタの接合/界面に対する理解と制御”
グラフェン・イノベーション, 日経BP社, 東京, 66-79, 2011
- C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
"High-Electron-Mobility Ge/GeO2 n-MOSFETs With Two-Step Oxidation",
IEEE Tran. Electron Devices, vol. 58, no. 5, pp. 1295-1301, May 2011.
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S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
"Isotope tracing
study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O",
Japanese Journal of Applied Physics, 50 (2011)04DA01,
published online Apr. 20, 2011
- L.Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S.K. Wang, and A. Toriumi,
"Interfacial Dipole at High-k Dielectric/SiO2 Interface: X-ray Photoelectron
Spectroscopy Characteristics",
Japanese Journal of Applied Physics, 50 (2011) 031502,
published online Mar. 22, 2011
- D. D. Zhao, T. Nishimura, C.H. Lee, K. Nagashio, K. Kita, and A. Toriumi,
"Junctionless Ge p-Channel Metal-Oxide-Semiconductor Field-EffectTransistors Fabricated on Ultra-thin Ge-on-Insulator Substrate",
Applied Physics Express, 4 (2011)031302.
published online Mar. 2, 2011
International
- A. Toriumi, C. H. Lee, S. K. Wang, T. Tabata, M. Yoshida, D. D. Zhao, T. Nishimura, K. Kita, and K. Nagashio,
"Material Potential and Scalability Challenges of Germanium CMOS",
Invited
2011 IEEE International Electron Device Meeting (IEDM2011), pp.646-649,
(Dec. 7, 2011, Washington DC).
- K. Nagashio, T. Moriyama, R. Ifuku, T. Yamashita, T. Nishimura, and A. Toriumi,
"Is Graphene Contacting with Metal Still Graphene?",
2011 IEEE International Electron Device Meeting (IEDM2011), pp.27-30,
(Dec. 5, 2011, Washington DC).
- S. K. Wang, K. Kita, K. Nagashio, T. Nishimura, and A. Toriumi,
"Oxygen Vacancy Formation, Diffusion and GeO desorption in GeO2/Ge
Stack",
42th IEEE Semiconductor Interface Specialists Conference (SISC2011),
(Dec.3, 2011, Arlington)
- T. Nishimura and A. Toriumi,
"MIGS – metal layer formation model at metal/Ge schottky barrier diode
interface",
42th IEEE Semiconductor Interface Specialists Conference (SISC2011) ,
(Dec.2, 2011, Arlington)
- C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
"Study of Wet Etching Chemistry on Ge Surface in DIW",
42th IEEE Semiconductor Interface Specialists Conference (SISC2011),
(Dec.1, 2011, Arlington)
- A. Toriumi, Y. Nakajima and K. Kita,
"Opportunities for Phase-controlled Higher-k HfO2", invited,
220th ECS Meeting, (Oct. 10, 2011, Boston)
- A. Toriumi and K.Nagashio,
"Material Characterization of Graphene", Invited
28th Annual Advanced Metallization Conference 2011,(Oct.4, 2011, San Diego)
- C. H. Lee, T. Nishimura, T. Tabata, D. D. Zhao, R. Ifuku, K. Nagashio,
K. Kita, and A. Toriumi,
"Experimental Study of Carrier Transport in Ultra-Thin Body GeOI MOSFETs",
2011 IEEE International SOI Conference,(Oct.6, 2011, Phoenix)
- S. Nakatsubo, T. Nishimura, K. Kita, K. Nagashio and A. Toriumi,
"Thermodynamic Control of Interface Layer Formation in High-k Gate
Stacs on 4H-SiC",
2011 International Conference on Solid State Devices and Materials (SSDM), pp614-615.(Sep.30, 2011, Nagoya)
- D. D. Zhao, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi,
"Dual Gated Germanium Junctionless p-MOSFETs",
2011 International Conference on Solid State Devices and Materials (SSDM),
pp923-924.(Sep.30, 2011, Nagoya)
- C. H. Lee, T. Nishimura, T. Tabata, M. Yoshida, K. Nagashio, K. Kita and
A. Toriumi,
"Control of Surface Roughness on Ge by Wet Chemical Treatments and Its Effects on Electron Mobility in n-FETs",
2011 International Conference on Solid State Devices and Materials (SSDM),
pp925-926.(Sep.30, 2011, Nagoya)
- R. Ifuku, K. Nagashio, T. Nishimura and A. Toriumi,
"Effects of Randomly Distributed Local Dirac Points in Graphene Channel
on Its FET Transfer Characteristics",
2011 International Conference on Solid State Devices and Materials (SSDM),
pp1284-1285.(Sep.30, 2011, Nagoya)
- T. Moriyama, K. Nagashio, T. Nishimura and A. Toriumi,
"Electrical Conductance in Graphene Contacting with Metal",
2011 International Conference on Solid State Devices and Materials (SSDM),
pp1288-1289.(Sep.30, 2011, Nagoya)
- T. Nishimura, K. Nagashio, K. Kita and A. Toriumi,
"A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions",
2011 International Conference on Solid State Devices and Materials (SSDM),
pp913-914.(Sep.29, 2011, Nagoya)
- T. Tabata, C. H. Lee, T. Nishimura, S. K. Wang, K. Kita and A. Toriumi,
"1.2 nm-EOT Al2O3 /Ge Gate Stack with GeO X-free Interface",
2011 International Conference on Solid State Devices and Materials (SSDM),
pp883-884.(Sep.28, 2011, Nagoya)
- K. Nagashio and A. Toriumi,
"Graphene/metal contact for graphene FET",
Advanced Metallization Conference 2011 (ADMETA 2011), invited,
(Sep.15, 2011, Tokyo, Shibaura tech.)
- K. Nagashio,
"Graphene devices: from experimental viewpoints"(Short course),
Third international conf. on
Microelectronics and Plasma Technology,
(Jul. 4, 2011, Dalian)
- Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
"Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region",
2011 Symposia on VLSI Technology,(Jun15, 2011, Kyoto)
- A. Toriumi, C.H. Lee, T. Nishimura, S.K. Wang, K.
Kita, and K. Nagashio,
"Recent progress of Ge technology for a post-Si CMOS", invited,
219th ECS Meeting, (May 4, 2011, Montreal).
- D. Zhao, T. Nishimura, C. Lee, R. Ifuku, K. Nagashio, K. Kita, and A. Toriumi,
"Junctionless Ge MOSFETs Fabricated on 10 nm-Thick GeOI Substrate",
219th ECS Meeting, (May 4, 2011, Montreal).
- S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
"Interfacial Reaction Induced GeO Desorption, GeO2 Crystallization and Non-uniform Void Formation in GeO2/Ge Stack",
2011 MRS Spring Meeting (Apr. 28, 2011, San Francisco)
- A. Toriumi, C.H. Lee, T. Nishimura, D. Zhao, S.K. Wang, K. Kita, and K.
Nagashio,
"Very High Electron and Hole Mobility in Ge MOSFETs", invited,
2011 MRS Spring Meeting (Apr. 27, 2011, San Francisco)
- K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi,
"Transport properties of graphene on SiO2 with specific surface structures",
2011 MRS Spring Meeting, (Apr. 27 ,2011, San Francisco).
- C. H. Lee, D. D. Zhao, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
"Direct Comparison of Electron and Hole Mobility in a Single GeOI
MOSFET with Ge/SiO2 Interface",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011),pp. 143-144. (Jan. 21, 2011, Tokyo)
- Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
"Demonstration of Very High-k HfO2 (k~50) by Suppressing Martensitic
Transformation in Thin Dielectric Films",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011),pp. 7-8. (Jan. 20, 2011, Tokyo)
- T. Tabata, C. H. Lee, K. Kita, and A. Toriumi,
"Interface Layer Scavenging and Defect Generation in LaLuO3/Ge MIS
Gate Stack",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011),
pp. 13-14. (Jan. 20, 2011, Tokyo)
- T. Yamashita, K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
"A Strong Interaction of Exfoliated Graphene with SiO2/Si Substrate",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011),pp. 19-20. (Jan.20, 2011, Tokyo)
- S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
"Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011),pp. 31-32 . (Jan. 20, 2011, Tokyo).
- T. Nishimura, C. H. Lee, K. Nagashio, K. Kita, and A.Toriumi,
"Sulfur Passivation of Germanium Surface by Vapor-phase Sulfidation
at Elevated Temperature",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011), pp. 67-68. (Jan. 20 2011, Tokyo)
- D. D. Zhao, T. Nishimura, C. H. Lee, K. Nagashio, K. Kita, and A. Toriumi,
"Junctionless Ge p-MOSFETs Fabricated on Ultra-thin GeOI Substrate",
2011 International Workshop on Dielectric Thin Film for Future Electron
Devices (IWDTF2011), pp. 141-142. (Jan. 20, 2011, Tokyo)
Domestic
- 長汐晃輔，西村知紀，喜多浩之，鳥海 明
「Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Mutltilayer Graphene Field-Effect Transistor」
「優秀論文賞受賞記念講演」
第72回応用物理学会学術講演会
（2011年8月31日, 山形大学（山形）)
- 森山喬史，長汐晃輔，西村知紀，鳥海 明
「金属と接触するグラフェンの電気伝導特性」
第72回応用物理学会学術講演会
（2011年8月31日, 山形大学（山形）)
- 鳥海明
「Ge CMOS の可能性と課題」 招待講演
第75回半導体・集積回路技術シンポジウム
(2011年7月7日, 早稲田大学（東京）)
- 長汐晃輔，鳥海明
「グラフェントランジスタの接合とその界面に対する理解と制御」招待講演
第30回電子材料シンポジウム
(2011年7月1日，滋賀)
- 長汐晃輔, 鳥海明,
「Graphene/SiO2界面に対する理解と制御」招待講演
電子デバイス研究会, 特別ワークショップ
(2011年3月7日, 首都大学東京（東京）)
- 西村 知紀, 李 忠賢, 王 盛凱, 田畑 俊行, 長汐 晃輔, 喜多 浩之, 鳥海 明
「High-k/Ge MOSFETにおける移動度特性の向上」 招待講演
「第16回ゲートスタック研究会 ─材料・プロセス・評価の物理─」
p.12 （2011年1月22日，東京)
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