| AWARDS |
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42nd JSAP Award for Best Review Paper Akira Toriumi, and Tomonori Nishimura "Germanium CMOS potential from material and process perspectives: Be more positive about germanium" (2020) Jpn. J. Appl. Phys. 57 (2018) 010101. ・ The 24th Workshop on Electronic Devices and Interfacial Technology, Yasuda Award Yuki Mori "Effects of Doping in Ferroelectric HfO2" (2019) ・ JST Presto Exchange Meeting Poster Award Takeaki Yajima "Research on sub-nW low power electronic circuits using neuro-inspired techniques." (2019) ・ 44th JSAP (Spring) Presentation Award Xu Wang "Kinetic Model for Thermal Oxidation of Germanium" (2018) ・ 40th JSAP Outstanding Paper Award Tomonori Nishimura, Takeaki Yajima, and Akira Toriumi "Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface" (2018) Appl. Phys. Express 9 (2016) 081201 ・ SSDM 2018 Young Researcher Award X. Wang "A new kinetic model for thermal oxidation of Ge" (2017) ・ 18th JSAP Outstanding Achievement Award, Akira Toriumi "先端MOSデバイスの素子物理・材料科学に関する研究と産業技術への貢献" (2017) ・ NF Foundation, The 6th R&D Encouragement Award, Takeaki Yajima "The study of low-power electronic deivices based on metal-insulator transition oxides." (2017) ・2016 IEEE EDS Japan Chapter Student Award(IEDM) Xu Lun "General relationship for cation and anion doping effects on ferroelectric HfO2 formation." IEDM (2016). ・The 8th Silicon Technology Devision Award Tomonori Nishimura, Takeaki Yajima, Akira Toriumi "Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface." Applied Physics Express 9, 081201 (2016). ・The 64th Japanese Applied Conference Poster Award (2017 JSAP) Takeaki Yajima, Tomonori Nishimura, Akira Toriumi "Fabrication of Phase-Transition Neuron Firing by Joule Heat Accumulation." ・2016 IEEE Cledo Brunetti Award (2016 IEDM) A. Toriumi For contributions to CMOS device design from materials engineering to device physics. ・The 77th JSAP Autumn Meeting 2016 Young Scientist Presentation Award Speech Xu Lun "Effects of nitrogen bonding on para-/ferroelectric transition of HfO2" ・Best Student Paper Award (2016 VLSI) C. Lu Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT. ・IEEE Fellow A.Toriumi For contributions to device physics and materials engineering for advanced CMOS technology. ・2015 IEEE EDS Japan Chapter Student Award(IEDM) Shoichi Kabuyanagi "Effects of free-carriers on rigid band and bond descriptions in germanium - Key to designing and modeling in Ge nano-devices -", IEDM (2015, Washington D.C., USA) ・2015 IEEE EDS Japan Chapter Student Award(IEDM) Xiuyan Li "Self-decomposition of SiO2 due to Si-chemical potential increase in SiO2 between HfO2 and substrate - Comprehensive understanding of SiO2-IL scavenging in HfO2 gate stacks on Si, SiGe and SiC -", IEDM (2015, Washington D.C., USA) ・Best Paper Award T. Nishimura, T. Yajima, S. Migita, and A. Toriumi "Ferroelectric properties of non-doped thin HfO2 films", IWDTF p7 (2015, Tokyo, Japan) ・Young Paper Award Lun Xu, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi "Anomalous Electrical Properties of Au/SrTiO3 Interface", IWDTF p119 (2015, Tokyo, Japan) ・SSDM Award A.Toriumi, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, M. Fukumoto, S. Inaba, I. Mori, and M. Yoshimi High Speed 0.1μm CMOS Devices Operating at Room Temperature (Presented at the 24th International Conference on Solid State Devices and Materials (1992), Tsukuba.) ・JSAP Autumn (Sep. 2015), Presentation Award Xiuyan Li The critical role of Si chemical potential in SiO2 scavenging in HfO2 gate stacks (Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi) ・2015 IEEE EDS Japan Chapter Student Award(VLSI) Cimang Lu Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT. VLSI (2015, Kyoto, Japan). ・JSAP Spring (Mar. 2015), Presentation Award L. Cimang Design of High-k and Interfacial Layer on Germanium for 0.5 nm EOT (Lu Cimang, Choong Hyun Lee，Tomonori Nishimura，Kosuke Nagashio，Akira Toriumi) ・20th Gate Stack Conference (Feb. 2015), Hattori award S. Kabuyanagi Electronic Structure Modulation Caused by Carrier Density and Interface Boundary Condition of Germanium ・2014 SSDM, SSDM Award Akira Toriumi High Speed 0.1μm CMOS Devices Operating at Room Temperature. (A.Toriumi, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, M. Fukumoto, S. Inaba, I. Mori, and M. Yoshimi) ・2014 IEDM, 2014 IEEE EDS Japan Chapter Student Award Li Xiuyan Analytical Formulation of SiO2-IL Scavenging in HfO2/SiO2/Si Gate Stacks: A Key is the SiO2/Si Interface Reaction. (X. Li, T. Yajima, T. Nishimura, K. Nagashio, and A. Toriumi) ・2013 VLSI, 2013 IEEE EDS Japan Chapter Student Award C. H. Lee Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs (C. H. Lee, C. Lu, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi) ・2013 IEDM, 2013 IEEE EDS Japan Chapter Student Award G. Oike High Electron Mobility (>16 cm2/Vsec) FETs with High On/Off Ratio (>106) and Highly Conductive Films (σ>102 S/cm) by Chemical Doping in Very Thin (~20 nm) TiO2 Films on Thermally Grown SiO2 (G. Oike, T. Yajima, T. Nishimura, K. Nagashio, A. Toriumi) ・19th Gate Stack Conference (Jan. 2014) Yasuda award T. Yajima Inhomogeneity mitigation in VO2 phase transition by using epitaxial ultra-thin films (Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi) ・IWDTF 2013年11月 Young Paper Award Takamasa Iwai Kinetic Understanding of Structural Phase Transformation in Ar-Sputtered HfO2. (Takamasa Iwai, Takeaki Yajima, Tomoki Nishimura, Kousuke Nagashio, Akira Toriumi) ・IWDTF 2013年11月 Young Paper Award Xiuyan Li Evidence of Si substrate significance for SiO2-IL scavenging in HfO2/SiO2/Si stack. (Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi) ・IWDTF 2013年11月 Best Paper Award C. Lu Network Modification Comparison of GeO2 on Ge by Intermixing with Trivalent Oxides (Sc2O3, Y2O3 and La2O3) (C. Lu, C. H. Lee, T. Nishimura, W.F. Zhang, K.Nagashio, and A. Toriumi) ・2013 Engineering Department of Univ of Tokyo (Sep. 2013), Best Teaching Award K. Nagashio ・34th Japanese Society of Applied Physics Conference (Mar. 2013), Presentation Award T. Tabata ・34th Japanese Society of Applied Physics Conference (Mar. 2013), Presentation Award R. Ifuku ・School of Engineering, Univ. of Tokyo (Feb. 2013), 2012 PhD Thesis Award C.-H. Lee Yasuhiro Nakajima 2011 IEEE EDS Japan Chapter Student Award(VLSI) "Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region", Feb. 1, 2012 Choong Hyun Lee 2010 IEEE EDS Japan Chapter Student Award for outstanding work in the paper "Ge MOSFETs performance: Impact of interface passivation", Jan. 27, 2011 ShengKai Wang IWDTF 2011 Young Researcher Award "Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction." S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi Yasuhiro Nakajima IWDTF 2011 Young Researcher Award "Demonstration of Very High-k HfO2 (k~50) by Suppressing Martensitic Transformation in Thin Dielectric Films." Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi Dandan Zhao IWDTF 2011 Young Researcher Award "Junctionless Ge p-MOSFETs Fabricated on Ultra-thin GeOI Substrate." D. D. Zhao, T. Nishimura, C. H. Lee, K. Nagashio, K. Kita, and A. Toriumi Choong Hyun Lee 2010JSAP Young Scientist Award for the Presentation of an Excellent Paper "Intrinsic difference between HPO and APO in Ge" (C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi) Choong Hyun Lee SSDM 2010 Young Researcher Award "High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation" (C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi) Choong Hyun Lee 2009 IEEE EDS Japan Chapter Student Award for outstanding work in the paper "Record-high Electron Mobility in Ge n-MOSFETs Exceeding Si Universality" January 26, 2010 Koji Kita The Electrochemical Society, High Deielectric Constant Gate Stacks V Symposium Best Presentation Award "Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization" K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura and A. Toriumi Toshitake Takahashi 2007 IEEE EDS Japan Chapter Student Award "Proof of Ge-Interfacing Concepts for Metal/High-k/Ge CMOS -Ge-intimate Material Selection and Interface Conscious Process Flow." T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita and A. Toriumi Yoshiki Yamamoto IWDTF 2006 Young Researcher Award "Vfb Modification by Thin La2O3 Insertion into HfO2/SiO2 Interface." Y. Yamamoto, K. Kita and A.Toriumi Kazuyuki Tomida IWDTF 2006 Young Researcher Award "Experimental Determination of Tunneling Effective Mass in HfO2." K. Tomida, K. Kita and A. Toriumi Kazuyuki Tomida SSDM 2006 Young Reasercher Award "Permittivity Enhancement of Hf(1-x)SixO2 Film with High Temperature Annealing." K. Tomida, K. Kita，and A. Toriumi, 5) Yi Zhao Chinese Government Award for Outstanding Self-financed Students Abroad Takamichi Yokoyama 3rd COE 21 International Symposium on Human-Friendly Materials Based on Chemisry Poster Award ”Energy Level Consideration of Source/Channel/Drain for Performance Enhancements of N- and P-channel Organic FETs” T Yokoyama, T Nishimura, K Kita, K Kyuno and A Toriumi Koji Kita, Kentaro Kyuno and Akira Toriumi SSDM Paper Award ”Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification.” 8）Hiroshi Irie 2004 IEEE EDS Japan Chapter Student Award "In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in n-and p-MOS Inversion Layers on (100), (110), and (111)" presented in IEDM 2004 H Irie, K. Kita, K. Kyuno and A. Toriumi Koji Kita 2003JSAP Young Scientist Award for the Presentation of an Excellent Paper (JAPANESE) 10) Hiroshi Irie 2003JSAP Young Scientist Award for the Presentation of an Excellent Paper (JAPANESE) Hiroshi Irie 2003 IEEE EDS Japan Chapter Student Award "Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects" presented in IEDM 2003 H Irie, K. Kita, K. Kyuno and A. Toriumi Hiroshi Irie STARC Symposium 2003 Best Presentation Award (Sep 11, 2003) (JAPANESE) Taiki Komoda, Semiconductor Company, Toshiba Corporation SSDM Young Researcher Award (Sep. 16, 2003) "Performance and Time-Dependent Degradation in a Single Grain-Size Pentacene TFTs" |
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