論文 |

2024
[6]Ryo Nanae, Satsuki Kitamura, Yih-Ren Chang, Kaito Kanahashi, Tomonori Nishimura, Redhwan Moqbel, Kung-Hsuan Lin, Mina Maruyama, Yanlin Gao, Susumu Okada, Kai Qi, Jui-Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio*, "Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain", Adv. Funct. Mater., 2024, 2406140.
https://doi.org/10.1002/adfm.202406140
[5]Shota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata*, "Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate", Appl. Phys. lett., 2024, 124, 263101.
https://doi.org/10.1063/5.0209432
[4]Redhwan Moqbel, Ryo Nanae, Satsuki Kitamura, Ming-Hao Lee, Yann-Wen Lan, Chi-Cheng Lee, Kosuke Nagashio, Kung-Hsuan Lin, "Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking", Adv. Optical Mater., 2024, 2400355.
https://doi.org/10.1002/adom.202400355
[3]N. Fang, Y. R. Chang, S. Fujii, D. Yamashita, M. Maruyama, Y. Gao, C. F. Fong, D. Kozawa, K. Otsuka, K. Nagashio, S. Okada, and Y. K. Kato, "Room-temperature quantum emission from interface excitons in 2 mixed-dimensional heterostructures", Nature commun., 2024, 15, 2871.
https://doi.org/10.48550/arXiv.2307.15399
[2]Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Single-gate MoS₂ Tunnel FET with thickness-modulated homojunction", ACS appl. mater. interfaces, 2024, 16, 8993-9001.
https://doi.org/10.1021/acsami.3c15535
[1]Ryuichi Nakajima, Tomonori Nishimura, Kaito Kanahashi, Keiji Ueno, and Kosuke Nagashio, "Work function modulation of Bi/Au bilayer system toward p-type WSe₂ FET" ACS appl. electronic mater., 2024 6(1), 144–149.
https://doi.org/10.1021/acsaelm.3c01091

2023
[8]N. Fang, Y. R. Chang, D. Yamashita, S. Fujii, M. Maruyama, Y. Gao, C. F. Fong, K. Otsuka, K. Nagashio, S. Okada & Y. K. Kato, "Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes", Nature Commun., 2023, 14, 8152.
https://doi.org/10.1038/s41467-023-43928-2
[7]Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Haonan Wang, Yubei Xiang, Keisuke Shinokita, Kazunari Matsuda, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Shift current photovoltaics based on a noncentrosymmetric phase in in-plane ferroelectric SnS", Adv. Mater., 2023, 35, 2301172.
https://doi.org/10.1002/adma.202301172
[6]Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Edward Chen, Kosuke Nagashio, "p-type conversion of WS₂and WSe₂ by position-selective oxidation doping and its application in top gate transistors", ACS appl. mater. interfaces, 2023, 15(22), 26977-26984.
https://doi.org/10.1021/acsami.3c04052
[5]Supawan Ngamprapawat, Jimpei Kawase, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, and Kosuke Nagashio, " From h-BN to graphene: characterizations of hybrid carbon-doped h-BN for applications in electronic and optoelectronic devices", Adv. Electronic Mater., 2023, 2300083.
https://doi.org/10.1002/aelm.202300083
[4]Hiroto Ogura, Seiya Kawasaki, Zheng Liu, Takahiko Endo, Mina Maruyama,Yanlin Gao, Yusuke Nakanishi, Hong En Lim, Kazuhiro Yanagi, Toshifumi Irisawa, Keiji Ueno, Susumu Okada, Kosuke Nagashio, Yasumitsu Miyata, "Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics", ACS nano, 2023, 17, 7, 6545-6554.
https://doi.org/10.1021/acsnano.2c11927
[3]Shuhong Li, Tomonori Nishimura, Mina Maruyama, Susumu Okada and Kosuke Nagashio, "Experimental verification of SO₂ and S desorption contributing to defect formation in MoS₂ by thermal desorption spectroscopy", Nanoscale Adv., 2023, 5, 405-411.
https://doi.org/10.1039/D2NA00636G
[2]Haruki Uchiyama, Kohei Maruyama, Edward Chen, Tomonori Nishimura, Kosuke Nagashio, "A Monolayer MoS₂ FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er₂O₃ Insulator Through Thermal Evaporation", Small, 2023, 19, 2207394.
https://doi.org/10.1002/smll.202207394
[1]Redhwan Moqbel, Yih-Ren Chang, Zi-Yi Li, Sheng-Hsun Kung, Hao-Yu Cheng, Chi-Cheng Lee, Kosuke Nagashio, Kung-Hsuan Lin, "Wavelength Dependence of Polarization-resolved Second Harmonic Generation from Ferroelectric SnS Few Layers", 2D mater. 2023, 10, 015022.
DOI:10.1088/2053-1583/acab74

邦文解説・図書
[1] 長汐晃輔, "2次元圧電/強誘電物質", 固体物理, 2023, 58, 605-612.
[2] 長汐晃輔, "トンネル電界効果型トランジスタ", 遷移金属ダイカルコゲナイドの基礎と最新動向, シーエムシー出版, 東京, 2023, 22章.
ISBN：978-4-7813-1758-8

2022
[7]Wataru Nishiyama, Tomonori Nishimura, Masao Nishioka, Keiji Ueno, Satoshi Iwamoto, and Kosuke Nagashio, "Is the Band Gap of Bulk PdSe₂ Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy-", Adv. Photonics Res., 2022, 3, 2200231.
https://doi.org/10.1002/adpr.202200231
[6]N. Fang, D. Yamashita, S. Fujii, K. Otsuka, T. Taniguchi, K. Watanabe, K. Nagashio, and Y. K. Kato, "Quantization of cavity mode shifts induced by atomically thin materials", Adv. Opt. Mater., 2022, 2200538.
https://doi.org/10.1002/adom.202200538
[5]Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe,Takashi Taniguchi, Kosuke Nagashio, "Current Injection into Single-crystalline Carbon-doped h-BN toward Electronic and Optoelectronic Applications", ACS Appl. Mater. Interfaces., 2022, 14, 22, 25731–25740.
https://doi.org/10.1021/acsami.2c04544
[4]Taro Sasaki, Keiji Ueno, Takashi Taniguchi,Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN", ACS Appl. Mater. Interfaces., 2022, 14, 22, 25659–25669.
https://doi.org/10.1021/acsami.2c03198
[3]Yih-Ren Chang, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe,Kosuke Nagashio, "Performance enhancement of SnS/h-BN Heterostructure p-type FET via Thermodynamically Predicted Surface Oxide Conversion Method", ACS Appl. Mater. Interfaces., 2022, 14, 17, 19928–19937.
https://doi.org/10.1021/acsami.2c05534
[2]Wataru Nishiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe₂ from Electrical Transport Properties", Adv. Funct. Mater., 2022, 32, 2108061.
https://doi.org/10.1002/adfm.202108061
[1]H. Ago, S. Okada, Y. Miyata, K. Matsuda, M. Koshino, K. Ueno, K. Nagashio, "Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation", Sci. Technol. Adv. Mater., 2022, 23, 275-299.
https://doi.org/10.1080/14686996.2022.2062576

2021
[7][Spotlights]Masaya Umeda, Naoki Higashitarumizu, Ryo Kitaura, Tomonori Nishimura, Kosuke Nagashio, "Identification of the position of piezoelectric polarization at the MoS₂/metal interface", Appl. Phys. Express, 2021, 14, 125002.
https://doi.org/10.35848/1882-0786/ac3d1f
[6][SiLight]I. Yonemori, S. Dutta, K. Nagashio, K. Wakabayashi, "Thickness-dependent Raman active modes of SnS thin films", AIP adv., 2021, 11, 095106.
https://doi.org/10.1063/5.0062857
[SiLight] https://aip.scitation.org/doi/10.1063/10.0006371
[5] Y.-R. Chang, T. Nishimura, K. Nagashio, "Thermodynamic perspective on the oxidation of layered materials and surface oxide amelioration in 2D devices", ACS appl. mater. interfaces, 2021, 13, 43282−43289.
DOI:10.1021/acsami.1c13279
[4]Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio, "Intrinsic Electronic Transport Properties and Carrier Densities in PtS₂ and SnSe₂: Exploration of n⁺-Source for 2D Tunnel FETs", Adv. Electronic Mater., 2021, 7, 2100292.
https://doi.org/10.1002/aelm.202100292
[3] T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, K. Nagashio, "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory", ACS nano, 2021, 15, 6658.
DOI:https://doi.org/10.1021/acsnano.0c10005
[2] T. Nishimura, T. Kojima, K. Nagashio, M. Niwa, “Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature”, Jpn. J. Appl. Phys., 2021, 60, SBBF03.
[1] Y.-R. Chang, N. Higashitarumizu, H. Kawamoto, F.-H. Chu, C.-J. Lee, T. Nishimura, R. Xiang, W.-H. Chang, S. Maruyama, K. Nagashio, "Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of SnS", Chem. Mater., 2021, 33, 1, 186–194.
DOI:10.1021/acs.chemmater.0c03184

邦文解説・図書
[1]東垂水直樹，長汐晃輔，”2 次元層状 SnS の面内強誘電性の実証”，セラミックス，2021, 56, 447-450.

2020
[10] H. Kawamoto, N. Higashitarumizu, N. Nagamura, M. Nakamura, K. Shimamura, N. Ohashi, and K. Nagashio, "Micrometer-scale monolayer SnS growth by physicalvapor deposition", Nanoscale, 2020, 12, 23274.
DOI: 10.1039/d0nr06022d
[9] M. Maruyama, K. Nagashio, and S. Okada, "Carrier Distribution Control in van der Waals Heterostructures of MoS₂ and WS₂ by Field-Induced Band-Edge Engineering", Phys. Rev. Applied, 2020, 14, 044028.
DOI:10.1103/PhysRevApplied.14.044028
[8] K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio, "All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality",
ACS Applied Materials & Interfaces, 2020, 12, 51598−51606.
https://dx.doi.org/10.1021/acsami.0c13233
[7] T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio, "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage", Small, 2020, 16, 2004907.
https://doi.org/10.1002/smll.202004907
[6] [Invited review] Kosuke Nagashio, "Understanding interface properties in 2D heterostructure FETs", Semicond. Sci. Technol., 2020, 35, 103003.
https://doi.org/10.1088/1361-6641/aba287
[5] N. Fang, K. Otsuka, A. Ishii,T. Taniguchi, K. Watanabe, K. Nagashio, Y. Kato, "Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics", ACS Photonics, 2020, 7, 7, 1773.
DOI: 10.1021/acsphotonics.0c00406
[4] P. Solís-Fernández, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Li, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, and H. Ago, "Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene", ACS Nano, 2020, 14, 6834−6844.
DOI: 10.1021/acsnano.0c00645
[3] N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B. -H. Lin, F. -H. Chu, I. Yonemori, T.i Nishimura, K. Wakabayashi, W. -H. Chang & K. Nagashio, "Purely in-plane ferroelectricity in monolayer SnS at room temperature", Nature commun.,2020, 11, 2428.
DOI:10.1038/s41467-020-16291-9
[2] M. Maruyama, K. Nagashio, S. Okada, "Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS₂", ACS appl. Electron. Mater., 2020, 2, 1352.
DOI:10.1021/acsaelm.0c00139
[1] N. Fang and K. Nagashio, "Quantum-mechanical effect in atomically thin MoS₂ FET", 2D mater, 2020, 7, 014001.
DOI: 10.1088/2053-1583/ab42c0

邦文解説・図書
[4] 長汐晃輔, "2次元層状ヘテロFETにおける界面特性制御", 応用物理, 2020, 89, 139-146.
DOI:10.11470/oubutsu.89.3_139
[3] 長汐晃輔, "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線, エヌ・ティー・エス, 東京,2020, pp. 251-260.
ISBN:9784860436575
[2] 長汐晃輔, "MoS₂ FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用, エヌ・ティー・エス, 東京, 2020, pp. 183-191.
ISBN:9784860436636
[1] 長汐晃輔, "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用, エヌ・ティー・エス, 東京, 2020, pp. 33-41
ISBN:9784860436636

2019
[7] W. Li, J. Zhou, S. Cai, Z. Yu, J. Zhang, N. Fang, T. Li, Y. Wu, T. Chen, X. Xie, H. Ma, K. Yan, N. Dai, X. Wu, H. Zhao, Z. Wang, D. He, L. Pan, Y. Shi, P. Wang, W. Chen, K. Nagashio, X. Duan, and X. Wang, "Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices", Nature Electronics, 2019, 2, 563–571. DOI: 10.1038/s41928-019-0334-y
[6] T. Nishimura, X. Luo, S. Matsumoto, T. Yajima, and A. Toriumi, “Almost pinning-free bismuth/Ge and /Si interfaces”, AIP Advances 2019, 9, 095013. DOI: 10.1063/1.5115535
[5] N. Fang, S. Toyoda, T. Taniguchi, K. Watanabe, and K. Nagashio, "Full energy spectra of interface state densities for n– and p-type MoS₂ field-effect transistors", Adv. Func. Mater. 2019, 29, 1904465. DOI: 10.1002/adfm.201904465
[4] N. Nagamura, H. Fukidome, K. Nagashio, K. Horiba, T. Ide, K. Funakubo, K. Tashima, A. Toriumi, M. Suemitsu, K. Horn, M. Oshima, "Influence of interface dipole layers on the performance of graphene field effect transistors", Carbon, 2019, 152, 680-687. DOI: 10.1016/j.carbon.2019.06.038
[3] E. Asakura, M. Suzuki, S. Karube, J. Nitta, K. Nagashio and M. Kohda, "Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS₂", Appl. Phys. Express, 2019, 12, 063005.(DOI: 10.7567/1882-0786/ab21a8)
[2] S. Toyoda, T. Uwanno, T. Taniguchi, K. Watanabe, and K. Nagashio, "Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes", Appl. Phys. Express, 2019, 12, 055008. DOI: 10.7567/1882-0786/ab176b
[1] R. Matsuoka, R. Toyoda, R. Shiotsuki, N. Fukui, K. Wada, H. Maeda, R. Sakamoto, S. Sasaki, H. Masunaga, K. Nagashio, and H. Nishihara, "Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue", ACS appl. mater. interfaces, 2019, 11, 3, 2730-2733, DOI: 10.1021/acsami.8b00743

邦文解説・図書
[1] 服部吉晃，長汐晃輔，”hBNの絶縁性破壊強さの異方性とその起源”，NEW DIAMOND，2019, 35, p19-24.

2018
[11] N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, and K. Nagashio, "Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation", Nanoscale, 2018, 10, 22474 – 22483, DOI: 10.1039/C8NR06390G.
[10] K. Taniguchi, N. Fang, and K. Nagashio, "Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS₂ FET", Appl. Phys. Lett. 2018, 113, 133505, https://doi.org/10.1063/1.5048099
[9] N. Fang, and K. Nagashio, "Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule", ACS appl. mater. interfaces, 2018, 10, 32355-32364, DOI: 10.1021/acsami.8b10687
[8] T. Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio, "Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs", ACS appl. mater. interfaces, 2018, 10, 28780-28788. DOI: 10.1021/acsami.8b08959
[7] J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio, "2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p⁺-WSe₂ Source", Adv. Electronic Mater. 2018, 4, 1800207, https://doi.org/10.1002/aelm.201800207
[6] S. Netsu, T. Kanazawa, T. Uwanno, T. Amemiya, K. Nagashio, Y. Miyamoto, "Type-II HfS₂/MoS₂ heterojunction transistors", IEICE Trans. Electron., 2018, E101-C, 338-342, DOI: 10.1587/transele.E101.C.338
[5] N. Higashitarumizu, H. Kawamoto, K. Ueno and K. Nagashio, "Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application", MRS Advances, 2018, 3, 2809-2814. https://doi.org/10.1557/adv.2018.404
[4]Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface", ACS appl. mater. interfaces, 2018, 10, 11732, DOI: 10.1021/acsami.7b18454
[3] N. Fang, K. Nagashio, "Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor", J. Phys. D, 2018, 51, 065110, https://doi.org/10.1088/1361-6463/aaa58c
[2] Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement", Phys. Rev. B, 2018, 97, 045425, DOI:https://doi.org/10.1103/PhysRevB.97.045425
[1] H. G. Ji, Y.-C. Lin, K. Nagashio, M. Maruyama, P. Solís Fernández, A. Sukma Aji, V. Pancahl, S. Okada, K. Suenaga, H. Ago, "Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching" Chem. Mater, 2018, 30, 403-411, DOI: 10.1021/acs.chemmater.7b04149

2017
[6] S. Kurabayashi, and K. Nagashio, ”Transport properties of the top and bottom surfaces in monolayer MoS₂ grown by chemical vapor deposition”, Nanoscale, 2017, 9, 13264-13271, DOI:10.1039/C7NR05385A.
[5] K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao, W. Norimatsu, and M. Kusunoki, Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator, ECS Transactions, 2017, 79, 91-97, DOI:10.1149/07901.0091ecst
[4] S. Sekizaki, M. Osada, and K. Nagashio, "Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets", Nanoscale, 2017, 9, 6471–6477, DOI:10.1039/C7NR01305A
[3] R. Matsuoka, R. Sakamoto, K. Hoshiko, S. Sasaki, H. Masunaga, K. Nagashio, and H. Nishihara, "Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface", J. Am. Chem. Soc., 2017, 139, 3145, DOI:10.1021/jacs.6b12776
[2] N. Fang, K. Nagashio, and A. Toriumi, "Experimental detection of active defects in few layers MoS₂ through random telegraphic signals analysis observed in its FET characteristics", 2D mater., 2017, 4, 015035, DOI:10.1088/2053-1583/aa50c4
[1] [Invited Review] K. Nagashio, "Graphene field-effect transistor application -Electric band structure of graphene in transistor structure extracted from quantum capacitance-", J. Mater. Res., 2017, 32, 64, DOI:10.1557/jmr.2016.366

邦文解説・図書
[1] 長汐晃輔, "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号, 日本化学会編化学同人, 2017, p61-67.
[2] 長汐晃輔, "2次元層状チャネルFETの電子輸送特性", 応用電子物性分科会誌, 2017, 23, 133-138.

2016
[3] Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride", Appl. Phys. Lett., 2016, 109, 253111.
[2] N. Takahashi, and K. Nagashio, "Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition", Appl. Phys. Express, 2016, 9, 125101.
[1] Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Anisotropic breakdown strength of single crystal hexagonal Boron Nitride", ACS appl. mater. interfaces, 2016, 8, 27877.

邦文解説・図書
[2] 長汐晃輔, "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線, エヌ・ティー・エス, 東京, 2016, pp.168-175.
[1] A. Toriumi, K. Nagashio, "Metal contacts to Graphene" in 2D materials for nanoelectronics, edited by M.Houssa, A. Dimoulas, A. Molle, CRC Press, 2016, pp.53-78.

2015
[5] T. Uwanno, Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio, "Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system", 2D mater. 2015, 2, 041002.[selected as highlights of 2015]
[4] K. Kanayama, and K. Nagashio, "Gap state analysis in electric-field-induced band gap for bilayer graphene", Sic. Rep. 2015,5, 15789.
[3] N. Fang, K. Nagashio, and A. Toriumi, "Subthreshold transport in mono- and multilayered MoS₂FETs", Appl. Phys. Express, 2015, 8, 065203.
[2] N. Takahashi, T. Taniguchi, K. Watanabe, and K. Nagashio, "Atomic layer deposition of Y₂O₃ on h-BN for a gate stack in graphene FETs", Nanotechnology, 2015, 26, 175708.
[1] Y. Hattori, K. Watanabe, T. Taniguchi, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride”, ACS nano, 2015, 9, 916.

邦文解説・図書
[1] K. Nagashio, A. Toriumi, "Graphene/metal contact" in Frontiers of graphene and carbon nanotubes, Springer, 2015, pp.53-78.

2014
[5] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, “Quantum capacitance measurement of bilayer graphene”, ECS Trans. 2014, 61(3), 75.
[4] H. Fukidome, K. Nagashio, N. Nagamura, K. Tashima, K. Funakubo, K. Horiba, M. Suemitsu, A. Toriumi, and M. Oshima, “Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy”, Appl. Phys. Express 2014, 7, 065101.
[3] J. L. Qi, K. Nagashio, T. Nishimura, A. Toriumi, "Crystal orientation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica", Nanotechnology, 2014, 25, 185602.
[2] K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi, "Large Fermi level modulation in graphene transistors with high-pressure O₂-annealed Y₂O₃ topgate insulators", Appl. Phys. Lett. 2014, 104, 083519.
[1] H. Fukidome, M. Kotsugi, K. Nagashio, R. Sato, T. Ohkochi, T. Itoh, A. Toriumi, M. Suemitsu, T. Kinoshita, "Orbital-specific tunability of many-body effects in bilayer graphene by gate bias and metal contact", Sci. Rep. 2014, 4, 3713.

邦文解説・図書
[1] 長汐晃輔, 金山薫, 西村知紀, 鳥海明, ”2層グラフェンにおけるギャップ内のキャリア応答と高電界でのサブバンド散乱”, 応用物理学会分科会シリコンテクノロジー, 2014, 167, 1.

2013
[5] R. Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi, "The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity", Appl. Phys. Lett. 2013, 103, 033514.
[4] T. Moriyama, K. Nagashio, T. Nishimura, and A. Toriumi, "Carrier density modulation in graphene underneath the Ni electrode", J. Appl. Phys. 2013, 114, 024503.
[3] N. Nagamura, K. Horiba, S. Toyoda, S. Kurosumi, T. Shinohara, M. Oshima, H. Fukidome, M. Suemitsu, K. Nagashio, A. Toriumi, "Direct observation of charge transfer region at interfaces in graphene device", Appl. Phys. Lett. 2013, 102, 241604.
[2] K. Nagashio, T. Nishimura, and A. Toriumi, "Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement", Appl. Phys. Lett. 2013, 102, 173507.
[1] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, "Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displancement", IEEE International Electron device meeting (IEDM) Tech. Dig. 2013, 503.

邦文解説・図書
[2] 長汐晃輔, 井福亮太, 森山喬史, 西村知紀, 鳥海明, ”本質的なグラフェン/金属界面特性”, 応用物理学会分科会シリコンテクノロジー, 2013, 154, 15.
[1] 長汐晃輔, 鳥海明, "グラフェン/金属コンタクト形成に対する理解と制御", 応用物理学会分科会シリコンテクノロジー, 2013, 158, 18.

2012
[1] K. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, and A. Toriumi, "Intrinsic graphene/metal contact", IEEE International Electron device meeting (IEDM) Tech. Dig. 2012, 68.[Invited]

邦文解説・図書
[4] 長汐晃輔, 鳥海明, "グラフェンFETの界面に対する理解と制御”, 電子情報通信学会誌, 2012, 95, 284.
[3] 長汐晃輔, 鳥海明, "グラフェン/SiO₂基板相互作用に対する理解と制御", 表面科学, 2012, 33, 552.
[2] 長汐晃輔, 鳥海明, "SiO₂上グラフェンの輸送特性の現状と理論予測限界", グラフェンの機能と応用展望II, シーエムシー出版, 東京, 2012, 185.
[1] 長汐晃輔, 鳥海明, "グラフェン/金属コンタクトの理解と制御", グラフェンの最先端技術と拡がる応用, フロンティア出版, 東京, 2012, 120.

2011
[3] K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, "Electric transport properties of graphene on SiO₂ with specific surface structures", J. Appl. Phys. 2011, 110, 024513.
[2] [Invited review] K. Nagashio, and A. Toriumi, "Density of states limited contact resistance in graphene FETs", Jpn.J. Appl. Phys. 2011, 50, 070108.
[1] K. Nagashio, T. Moriyama, R. Ifuku, T. Nishimura, and A. Toriumi, "Is graphene contacting with metal still graphene?", IEEE International Electron device meeting (IEDM) Tech. Dig. 2011, 27.

邦文解説・図書
[1] 長汐晃輔, 鳥海明, "グラフェントランジスタの接合とその界面に対する理解と制御", グラフェン・イノベーション, 日経 BP社, 東京, 2011, 66.

2010
[3] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Systematic investigation of intrinsic channel properteis and contact resistance on mono- and multi-layered graphene FET", Jpn. J. Appl. Phys. 2010, 49, 051304. [応用物理学会優秀論文賞]
[2] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Contact resistivity and current flow path at metal/graphene contact", Appl. Phys. Lett. 2010, 97, 143514.
[1] K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, "Impact of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exforiated graphene films", IEEE International Electron device meeting (IEDM) Tech. Dig. 2010, 564.

邦文解説・図書
[2] 相馬聡文, 小川真人, 山本貴博, 渡辺一之, 長汐晃輔, "グラフェンナノエレクトロニクス素子の開発に向けて- 素子シュミレーションと素子作成・物性評価-", 固体物理, 2010, 45, 63.
[1] 長汐晃輔, 西村知紀, 喜多浩之, 鳥海明, "グラフェン/金属コンタクトの重要性 -移動度とコンタクト抵抗-”, 応用物理学会分科会シリコンテクノロジー, 2010, 118, 48.

2009
[2] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Mobility variations in mono- and multi-layer graphene films", Appl. Phys. Express, 2009, 2, 025003.
[1] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Metal/graphene contact as a performance killer of ultra-high mobility graphene – analysis of intrinsic mobility and contact resistance -", IEEE International Electron device meeting (IEDM) Tech. Dig. 2009, 565.

邦文解説・図書
[1] 長汐晃輔, 鳥海明, "グラファイトからグラフェンへ -バンドオーバーラップ減少に伴う電子輸送特性の連続的変化-", 応用電子物性分科会誌, 2009, 15, 120.

Before joinning to Mater. Eng. in UT [selected]
[25] K. Nagashio, and K. Kuribayashi, "Chapter 8, Crystal growth of spherical Si" in Crystal growth of Si for solar cell, edited by K. Nakajima, and N. Usami, Springer, 2009, 121.
[24] K. Nagashio, K. Kodaira, K. Kuribayashi, and T. Motegi, "Spreading and solidfication of a highly undercooled Y₃Al₅O₁₂ droplet impinging on a substrate", Int. J. Heat Mas Trans., 2008, 51, 2455.
[23]K. Nozaki, K. Nagashio, and K. Kuribayashi, “Orientation analysis of hexagonal dendrite formed from undercooled melt of a-FeSi₂”, Metal. Mater. Trans. A, 2008, 39A, 135.
[22] K. Nagashio, K. Nozaki, K. Kuribayashi, and K. Katayama, "The dynamic process of dendrite fragementation in solidification from undercooled Si melt using time-resolved X-ray diffraction, Appl. Phys. Lett. 2007, 91, 061916.
[21] K. Nagashio, K. Kuribayashi, M. S. Vijaya Kumar, K. Niwata, T. Hibiya, A. Mizuno, M. Watanabe, Y. Katayama, "In-situ identification of the metastable phase during solidification from the undercooled YFeO₃ melt by fast X-ray diffractometry at 250 Hz", Appl. Phys. Lett, 2006, 89, 241923.
[20] K. Nagashio, M. Adachi, K. Higuchi, A. Mizuno, M. Watanabe, K. Kuribayashi, and Y. Katayama, “Real time X-ray observation of solidification from undercooled Si melt”, J. Appl. Phys., 2006, 100, 033524.
[19] 長汐晃輔, "seeing is believing -急冷凝固課程の可視化を目指して-", まてりあ, 2006, 45, 294.
[18] K. Nagashio, and K. Kuribayashi, "Experimental verification of ribbon formation process in chill-block metl spinning", Acta mater. 2006, 54, 2353.
[17] L. Bai, C. Xu, N. C. Giles, K. Nagashio, and R. S. Feigelson, “Correlation of the electrical and optical properties of CdGeAs₂”, J. Appl. Phys., 2006, 99, 013512.
[16] K. Nagashio, H. Okamoto, H. Ando, K. Kuribayashi, and I. Jimbo, "Spherical Si crystal fromed by semisolid process in drop tube", Jpn. J. Appl. Phys. 2006, 45, L623.
[15] K. Nagashio, H. Okamoto, K. Kuribayashi, and I. Jimbo, “Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt”, Metall. Mater. Trans. A, 2005, 36A, 3407.
[14] K. Nagashio, and K. Kuribayashi, "Growth mechanism of twin-related and twin-free facet Si dendrites", Acta mater. 2005, 53, 3021.
[13] 長汐晃輔, 栗林一彦, "過冷融液からのファセットSiのデンドライト成長 -球状単結晶育成へ向けて-", 日本結晶成長学会誌, 2005, 32, 314.
[12] M. Li, K. Nagashio, T. Ishikawa, S. Yoda, and K. Kuribayashi, “Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts”, Acta mater., 2005, 53, 731.
[11] K. Nagashio, H. Murata, K. Kuribayashi, “Spreading and solidification behavior of molten Si droplets impinging on substrates”, Acta mater., 2004, 52, 5295.
[10] L. Bai, N. C. Giles, P. G. Schunemann, T. M. Pollak, K. Nagashio, and R. S. Feigelson, “Donor-Acceptor Pair Emission Near 0.55 eV in CdGeAs₂”, J. Appl. Phys., 2004, 95, 4840.
[9] K. Nagashio, A. Watcharapasorn, K. T. Zawilski, R. C. DeMattei, and R. S. Feigelson, L. Bai, N. Giles, L. Halliburton, P. G. Schunemann, "Correlation between dislocation etch pits and optical absorption in CdGeAs₂", J. Crystal Growth, 2004, 269, 195.
[8] K. Nagashio, A. Watcharapasorn, R. C. DeMattei, and R. S. Feigelson, “Fiber growth of near stoichiometric LiNbO₃ single crystal by laser heated pedestal growth method”, J. Crystal Growth, 2004, 265, 190.
[7] D. E. Gustafson, W. H. Hofmeister, R. J. Bayuzick, K. Nagashio, and K. Kuribayashi, “Formation of Y_xNd_1-xBa₂Cu₃O_7-d (0<x<0.9) superconductors from an undercooled melt via aero¯acoustic levitation”, Mater. Sci. Eng. A, 2003, 341, 1.
[6] N. Y. Garces, N. C. Giles, L. E. Halliburton, K. Nagashio, R. S. Feigelson, P. G. Schunemann, “Electron paramagnetic resonance of C^r2+and Cr⁴⁺ ions in CdGeAs₂crystals”, J. Appl. Phys., 2003, 94, 7567-70.
[5] M. Li, K. Nagashio, and K. Kuribayashi, “Reexamination of the solidification behavior of undercooled Ni-Sn eutectic melts”, Acta mater., 2002, 50, 3239.
[4] K. Nagashio, and K. Kuribayashi, “Phase selection in the undercooled peritectic Y₃Fe₅O₁₂melt”, Acta mater., 2002, 50, 1973.
[3] K. Nagashio, and K. Kuribayashi, "Metastable phase formation from an undercooled rare-earth orthoferrite melt", J. Am. Ceram. Soc. 2002, 85, 2550.
[2] K. Nagashio, and K. Kuribayashi, "Rapid solidification of Y₃Al₅O₁₂, garnet from hypercooled melt", Acta mater, 2001, 49, 1947.
[2] K. Nagashio, K. Kuribayashi, and Y. Takamura, "Phase selection of peritectic phase in undercooled Nd-based superconducting oxides", Acta mater. 2000, 48, 3049.
[1] K. Nagashio, Y. Takamura, K. Kuribayashi, and Y. Shiohara, “Microstructural control of NdBa₂Cu₃O_7-d superconducting oxide from highly undercooled melt by containerless processing”, J. Crystal Growth, 1999, 200, 118.