Presentations |

2024
International
[11][Invited] Kosuke Nagashio, “2D layered semiconductor FETs : Challenge & Perspective”, International Czech-Japanese Symposium on Advanced Multiscale Materials for Key Enabling Technologies, (September 26-27, 2024, Prague, Czech Republic).
[10][Invited] Kosuke Nagashio, “2D layered semiconductor FETs: P type operation & large-scale device characterization”, International UK-Japan Symposium on 2D Materials, (September 24-25, 2024, Cambridge, UK).
[9][Inveted, Short Course]Kosuke Nagashio, “2D layered semiconductor FETs : Challenge & Perspective”, International Conference on Solid State Devices and Materials (SSDM), (September. 1, 2024, Convention center Arcrea HIMEJI, Hyogo).
[8]Shuhong Li, Keisuke Atsumi, Tomonori Nishimura, Kaito Kanahashi, Yoshiki Sakuma, Kosuke, “Why does everyone transfer MoS₂ grown on sapphire to a Si substrate?-Interaction between MoS₂/sapphire-”, International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2024, Convention center Arcrea HIMEJI, Hyogo).
[7]Keisuke Atsumi, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, Vincent Tung, Yoshiki Sakuma, Kosuke Nagashio, “Thermal-activation-type Electron Transport Behavior in MOCVD MoS₂ Film”, International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2024, Convention center Arcrea HIMEJI, Hyogo).
[6]Yuta Kono, Tomonori Nishimura, Kaito Kanahashi, Shunto Arai, Yasumitsu Miyata, Kosuke Nagashio, “Probing super-hydrophobic Cytop/MoS₂ interface properties”, International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2024, Convention center Arcrea HIMEJI, Hyogo).
[5][Invited] Kosuke Nagashio, "2D layered semiconductor FETs: P type operation & large-scale device characterization", 2024 Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM), (July 23, 2024, Takeda Hall, Asano Campus, The University of Tokyo, Tokyo).
[4]Keisuke Atsumi, Shuhong, Li, Tomonori, Nishimura, Kaito Kanahashi, Vincent Tung,Yoshiki Sakuma, Kosuke Nagashio “Wafer scale evaluation and device fabrication of MoS₂ film grown by MOCVD”, 2024 Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM), (July 22, 2024, Takeda Hall, Asano Campus, The University of Tokyo, Tokyo).
[3]Ryo Nanae, Satsuki Kitamura, Yih-Ren Chang, Kaito Kanahashi, Tomonori Nishimura, Redhwan Moqbel, Kung-Hsuan Lin, Mina Maruyama, Yanlin Gao, Susumu Okada, Kai Qi, Jui-Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Bulk photovoltaic effect in single domain ferroelectric SnS", 2024 AEFM: Advanced Epitaxy for Freestanding Membranes and 2D Materials, (July 22, 2024, Takeda Hall, Asano Campus, The University of Tokyo, Tokyo).
[2]Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, Kosuke Nagashio “Er2O3 top gate MoS2 FET with EOT lower than 1 nm”, 2024 Materials Research Society (MRS) spring meeting (Apr 23, 2024, Seattle, Washington).
[1][Invited] Kosuke Nagashio, “Shift current photovoltaics in ferroelectric SnS” JAIST International symposium on Nano-Materials for Novel Devices, (January 11, 2024, Kanazawa Chamber of Commerce and Industry Hall, Kanazawa, Ishikawa).

2023
International
[9][Invited]Kosuke Nagashio, “Shift current photovoltaics in ferroelectric SnS” International Conference on Materials and Systems for Sustainability 2023(ICMaSS), (December. 2, 2023, Nagoya University, Nagoya, Aichi).
[8][keynote]Kosuke Nagashio, “2D layered semiconductors: Challenge & Perspective” 36th International Microprocesses and Nanotechnology Conference (MNC), (November. 14, 2023, Keio Plaza Hotel Sapporo,Japan).
[7][Invited]Kosuke Nagashio, “Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced
Spiral Growth for Energy Harvesting” 3rd Nucleation and Growth Research Conference (NGRC), (November. 10, 2023, Nippon Christian Academy Kansai Seminar House, Sakyo-ku, Kyoto).
[6]Ryo Nanae, Satsuki Kitamura, Yih-Ren Chang, Tomonori Nishimura, Keisuke Shinokita, Kazunari Matsuda, Kosuke Nagashio, “Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement” International Conference on Solid State Devices and Materials (SSDM), (September. 6, 2023, Nagoya Congress Center, Aichi).
[5]Satsuki Kitamura, Ryo Nanae, Yih Ren Chang, Tomonori Nishimura, Kosuke Nagashio, “In-plane polarization domain of ferroelectric SnS thin film by PFM measurement”, International Conference on Solid State Devices and Materials (SSDM), (September. 6, 2023, Nagoya Congress Center, Aichi).
[4]Shuhong Li, Tomonori Nishimura, Kosuke Nagashio, “Er₂O₃ top gate MoS₂ FET with EOT lower than 1 nm”, International Conference on Solid State Devices and Materials (SSDM), (September. 6, 2023, Nagoya Congress Center, Aichi).
[3]Supawan Ngamprapawat, Jimpei Kawase, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, “From h-BN to graphene: comprehensive structural characterizations of hybrid carbon-doped h-BN to understand its electrical conductivity”, International Conference on Solid State Devices and Materials (SSDM), (September. 7, 2023, Nagoya Congress Center, Aichi).
[2]Ryuichi Nakajima, Tomonori Nishimura, Keiji Ueno, Yasumitsu Miyata, Kosuke Nagashio, “Stack control of Bi/Au bilayer electrodes toward p-type WSe₂ FET”, International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2023, Nagoya Congress Center, Aichi).
[1][Invited] Kosuke Nagashio, “Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective ”, 2023 Symposia on VLSI Technology and Circuits, (June 11-16, 2023, RIHGA Royal Hotel, Kyoto, Japan).

2022
International
[15][Invited]Kosuke Nagashio, “Consider the S vacancy formation in MoS₂”, A3 Foresight International Symposium 2022, (Dec. 9, 2022, Rusutsu, Hokkaido, Japan).
[14]S. Ngamprapawat, T. Nishimura, K. Watanabe, T. Taniguchi and K. Nagashio, “Application of single-crystal carbon-doped h-BN to electrically-driven devices”, A3 Foresight International Symposium 2022, (Dec. 9, 2022, Rusutsu, Hokkaido, Japan).
[13]T. Fukui, T. Taniguchi, K. Watanabe, T. Nishimura, & K. Nagashio, “Demonstration of single-gate MoS₂ TFET with natural in-plane heterojunction”, A3 Foresight International Symposium 2022, (Dec. 9, 2022, Rusutsu, Hokkaido, Japan).
[12]S. Ngamprapawat, “Ohmic current injection into single-crystal h-BN toward electrically-driven device applications”, The 10th International Workshop on 2D Materials, (July. 5. 2022, Online).
[11]H. Uchiyama, “Giant Stark effect in Bilayer MoS₂ Field-Effect Transistors”, 9th International Workshop on 2D Materials, (Feb. 17. 2022, Online).
[10][Invited]Kosuke Nagashio, “Novel high-k insulator deposition on 2D materials for future electronics”, International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2022, Makuhari Mess Chiba).
[9]Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio“Ohmic current injection into single-crystal carbon-doped h-BN toward two-dimensional power device application”, International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2022, Makuhari Mess Chiba).
[8]Tomohiro Fukui, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio, “Demonstration of Single-gate MoS₂ Tunnel FET　with Natural In-plane Heterojunction”, International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2022, Makuhari Mess Chiba).
[7]Ryuichi Nakajima, Tomonori Nishimura, Keiji Ueno, Kosuke Nagashio,“Work function modulation of Au/Bi bilayer system toward p-type WSe₂ FET”, International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2022, Makuhari Messe, Chiba).
[6]Shuhong Li, Tomonori Nishimura, Mina Maruyama, Susumu Okada, Kosuke Nagashio, “Revealing the role of oxygen on defect formation of MoS₂ by combining thermal desorption spectroscopy and atomic layer deposition”, International Conference on Solid State Devices and Materials (SSDM), (September. 27, 2022, Makuhari Messe, Chiba).
[5][Invited] K. Nagashio, “Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device”, The 22nd Int. Conf. on Sci & Appl. of Nanotubes and Low-dimensional Materials (NT22), (June, 21, 2022, online).
[4][Invited] K. Nagashio, “50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device”, 241st ECS Meeting, (June, 3, 2022, online).
[3]Haruki Uchiyama, Mina Maruyama, Susumu Okada, Tomonori Nishimura, Kosuke Nagashio, “Mobility Enhancement in Bilayer 2D Material Field-Effect Transistors by the Giant Stark Effect”, 2022 (virtual) Materials Research Society (MRS) spring meeting, (May, 23, 2022, online).
[2]Yih-Ren Chang, Tomonori Nishimura, Kosuke Nagashio, “Thermodynamics Perspective on 2D Materials Oxide Formation and Amelioration”, 2022 Materials Research Society (MRS) spring meeting, (May, 9, 2022, Hawaii) (Poster)
[1]S. Ngamprapawat, T. Nishimura, K. Watanabe, T. Taniguchi, and K. Nagashio, “Current Injection into Single-Crystalline h-BN Towards 2D Power Device Application”, 2022 MRS spring meeting & exhibit, (May 23, 2022, online).

2021
International
[9][Invited] K. Nagashio, "Room temperature in-plane ferroelectricity in SnS", International Microprocesses and Nanotechnology Conference (MNC2021),(Oct. 27th, Online, 2021).
[8][Invited] K. Nagashio, "Two-dimensional tunnel FET", International Conference on Materials and Systems for Sustainability (ICMaSS),(Nov. 5th, Online, 2021).
[7]R. Kato, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio, Polarity transition from n-type to p-type WS2 FET by controlling Schottky barrier, International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
[6]Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura,Kosuke Nagashio, "50 ns Ultrafast P/E Operation in 2D Heterostructured Non-Volatile Memory Device", International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
[5]Yih-Ren Chang, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "High performance SnS/h-BN heterostructure p-FET via Ti contact reaction", International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
[4]Wataru Nishiyama, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "Qualitative Judgement of Inconsistent Band Gap Values for Bulk PdSe2 from Electrical Transport Properties" International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
[3]Yih-Ren Chang, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio,” Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of PVD SnS”, 2021 virtual Materials Research Society (MRS) spring meeting, (April, 19, 2021, online).
[2][Invited] K. Nagashio, "All 2D Heterostructure Tunnel Field Effect Transistors", 5th IEEE Electron Devices Technology and Manufacturing conference 2021 (EDTM), (April, 9, 2021, Chengdu, China, Online).
[1][Invited] K. Nagashio, "2D layered semiconductors: Challenge & Perspective", 2021 International Symposium n VLSI Technology, System and Applications (VLSI-TSA), (April, 21, Hsinchu,Taiwan, Online).

2020
International
[9]N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B.-H. Lin, F.-H. Chu, I. Yonemori, T. Nishimura, K. Wakabayashi, W.-H. Chang, K. Nagashio, "Experimental Demonstration of In-Plane Ferroelectricity in SnS Down to Monolayer", 2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
[8][Invited] K. Nagashio, "Interface engineering for 2D layered semiconductors", 2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
[7]K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, Kosuke Nagashio, "The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET", International Conference on Solid State Devices and Materials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
[6]Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "Understanding the Tunneling Behavior in 2D Based Floating Gate Type Memory Device by Measuring Floating Gate Voltage", International Conference on Solid State Devices and Materials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
[5]Yuichiro Sato, Keiji Ueno, Tomonori Nishimura, Kosuke Nagashio, "Carrier Density of Apparently Degenerated PtS2 Determined by Hall Measurement", International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2020, All-VIRTUAL conference).
[4]Tomonori Nishimura, Toshiya Kojima, Kosuke Nagashio, Masaaki Niwa, "Ion conductivity of low-Y2O3-content yttria-stabilized zirconia", International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2020, All-VIRTUAL conference).
[3]Yih-Ren Chang, Naoki Higashitarumizu, Hayami Kawamoto, Fu-Hsien Chu, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio, "Screw dislocation driven spiral growth in SnS initiated by atomic graphene steps", International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2020, All-VIRTUAL conference).
[2][Invited] K. Nagshio, "In-plane ferroelectricity in monolayer SnS", 6th international Workshop on 2D Materials 2020, supported by A3 Foresight Program, (Sep. 24-25, 2030, Online).
[1]T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio, "Understanding the device operation of ambipolar channel based 2D memory devices by trajectory of floating gate voltage", 78th Device Research Conference, (June 23, 2020, Online).

2019
International
[24]K. Nagashio, K. Taniguchi, and N. Fang, ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS₂ FET”, Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama).
[23]T. Uwanno, T. Taniguchi, K. Watanabe, K. Nagashio, ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”, Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama).
[22]K. Nagashio, "Ferroelectricity in monolayer SnS", JSPS/EPSRC C2C meeting, (Nov. 22, 2019, Tohoku univ., Sendai).
[21]T. Nishimura, “Fermi level pinning at metal/germanium interface”,JSPS/EPSRC/CNRS Core-to-core Seminar, (Nov. 22, 2019, Tohoku Univ., Sendai,Japan).
[20][Invited] K. Nagashio, "Understanding interface properties in 2D heterostructure FETs", 2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan).
[19][Invited] T. Nishimura and A. Toriumi, “Thermal oxidation of germanium”,2019 Int. Workshop on Dielectric thin films for future electron devices-science and technology-, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan).
[18][Invited] K. Nagashio, "Full energy spectra of interface states density for n– and p-type MoS₂ field effect transistors", Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
[17]N. Higashitarumizu, "All-2D Flexible Device with Piezoelectric Layered Materials for Highly Sensitive Sensor and Generator Applications", Recent Progress in Graphene Research(RPGR), (October8, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Oral）
[16]T. Sasaki, "High Temperature Retention Study of MoS₂/h-BN/MoS₂ Hetero-Stack Based Non-Volatile Memory", Recent Progress in Graphene Research(RPGR), (October9, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Poster）
[15]H. Kawamoto, "Growth and Characterization of High Quality Monolayer SnS", Recent Progress in Graphene Research(RPGR), (October7, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Poster）
[14]K. Nakamura, "Selection Mechanism of Band Alignment in 2D p⁺/n Tunnel FET", Recent Progress in Graphene Research(RPGR), (October8, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Oral）
[13]N. Higashitarumizu, H. Kawamoto, K. Nagashio, "Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications", International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
[12]T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio, "388 K High Temperature Retention Study of 2D Hetero-stack Based Non- Volatile Memory", International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
[11]K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio, "Band Alignment in Charge-Transfer-Type p⁺-WSe₂/MoS₂ Tunnel FET", International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
[10]H. Kawamoto, N. Higashitarumizu, M. Nakamura, I. Yonemori, K. Wakabayashi, K. Nagashio, "PVD growth of monolayer SnS under S-rich condition toward piezoelectric application", International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
[9]][Invited] K. Nagashio, "2D heterostructure FETs", PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
[8]][Invited] K. Nagashio, "2D layered semiconductors", 7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan).
[7][Invited] K. Nagashio, "How to understand interface properties in 2D heterostructure FETs", 2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan).
[6][Invited] T. Nishimura, X. Luo, T. Yajima, and A. Toriumi, “Understanding and control of Fermi level pinning at metal/germanium interface”, IEEE Int.Interconnect Technology Conference and Materials for Advanced Metallization Conference, (Jun. 5, 2019, Brussels, Belgium).
[5]K. Nagashio, "All solid-state 2D tunnel FET", Compound semiconductor week 2019 (CSW2019), (May 19-23, 2019, Kasugano International Forum, Nara, Japan).
[4]N. Higashitarumizu, H. Kawamoto, K. Nagashio, "Electromechanical Response of Few-to-monolayer SnS PVD-grown on Flexible Mica", 2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
[3]T. Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio, "Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor", 2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
[2][Invited] K. Nagashio, "Interface engineering for 2D layered semiconductors", 2019 International Symposium on VLSI Technology, Systems and Applications (2019 VLSI-TSA), (March, 22-25, 2019, Ambassador Hotel Hsinchu,Taiwan).
[1][Invited] K. Nagashio, "Interface engineering in 2D heterostructure devices", A3 joint seminar 2019, (Jan. 18-20, 2019, Atami, Japan).

2018
[14]K. Nagashio, "Interface engineering for 2D layered semiconductors", UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
[13]N. Higashitarumizu, H. Kawamoto, K. Nagashio, "Interface engineering for 2D layered semiconductors", UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
[12][Invited]K. Nagashio, "Electrically Inert Interface in 2D Heterostructure FETs", Workshop on innovative nanoscale devices and systems (WINDS2018), (Nov. 28, 2018, The Westin Hapuna Beach Resort, Kohala, Hawaii, USA).
[11][Invited]K. Nagashio, "Electrically inert interface in 2D heterostructure FETs", 3rd Japan-EU flagship workshop on graphene and related 2D materials, (2018, Nov. 19, Sendai, Japan.)
[10]K. Nagashio, "Pinpoint pick up and bubble free transfer in 2D heterostructure fabrication", JSPS/EPSRC C2C meeting, (Oct. 30, 2018, Tohoku univ., Sendai).
[9]N. Fang, K. Nagashio, "Interface Traps“Extrinsically” Deliver MIT in Monolayer MoS2 FET", International Conference on Solid State Devices and Materials (SSDM), (September. 12, 2018, Univ. of Tokyo, Tokyo)
[8]N. Higashitarumizu, H. Kawamoto, K. Maruyama, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, K. Nagashio, "Strongp-type SnS FETs: From Bulk to Monolayer", International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
[7]S. Toyoda, T. Taniguchi, K.Watanabe, K. Nagashio. "Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET", International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
[6]K. Maruyama, K. Nagashio. "High-kEr2O3 top gate deposition on 2D channel at room temperature by PO2 controlled thermal evaporation", International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
[5][Invited] K. Nagashio, Interface engineering for 2D layered semiconductors, IUMRS-ICEM2018, (August, 23, 2018, Daejeon, Korea).
[4][Invited] K. Nagashio, Electrically inert interface in 2D heterostructure FETs, AWAD2018, (July, 3, 2018, Kitakyusyu, Japan).
[3]K. Nagashio, "Interface engineerign for 2D electronics", Core to core program, (April, 16-17, 2018, Cambridge university, UK).
[2] N. Higashitarumizu, H. Kawamoto, K. Ueno, K. Nagashio, "Fabrication and Surface Engineering of Two-dimensional SnS toward Piezoelectric Nanogenerator Application", 2018 MRS Spring Meeting, (April, 4, 2018, Phoenix Convention Center, Phoenix, USA).
[1][Invited] K. Nagashio, "Understanding of layered heterointerfaces in 2D semiconductors", 10th anniversary international symposium on advanced Plasma science (ISPlamsa2018), (March, 5, 2018, Meijyo univ., Nagoya).

2017
[9][Invited] K. Nagashio, "Interface engineering for 2D electonics", 2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
[8]Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Random Telegraph Noise in h-BN under Constant-Voltage Stress Test", International Conference on Solid State Devices and Materials (SSDM), (September. 21, 2017, Sendai International Center, Sendai)
[7]N. Fang and K. Nagashio, "Quantitative study of interfacial properties in monolayer MoS₂ FET", International Conference on Solid State Devices and Materials (SSDM), (September. 21, 2017, Sendai International Center, Sendai)
[6]K. Taniguchi, and K. Nagashio, "Detection of electron trapping/detrapping in MoS₂FET by high time-resolved I-V measurement", International Conference on Solid State Devices and Materials (SSDM), (September. 21, 2017, Sendai International Center, Sendai)
[5][Invited] K. Nagashio, "Interface engineering for 2D layered semiconductors", 2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
[4][Invited] K. Nagashio, "Gap engineering and reliability study for 2Delectronics", 6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria).
[3]T. Uwanno, T. Taniguchi, K. Watanabe, and K. Nagashio, "Improvement ofIon/Ioff for h-BN encapsulated bilayer graphene by graphite local back gateelectrode", APS March meeting 2017, (March 17, 2017, New Orleans).
[2]N. Fang and K. Nagashio, "Interface states analysis in atomically thin MoS2FET", APS March meeting 2017, (March 16, 2017, New Orleans).
[1][Invited] K. Nagashio, "Interface engineering for 2D electonics",Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo).

2016
[13] K. Nagashio, "Dielectric breakdown of hexiagonal boronitride", UTokyo-NTU joint conference at NUT 2016, (Nov. 31-Dec.1, 2016, NTU, Taiwan)
[12] [Invited] K. Nagashio, "Graphene transistor application" Core to core program, (November, 16-17, 2016, Tohoku university, Sendai).
[11] [Invited] K. Nagashio, "Reliability study on layered 2D insulator", 230th Electrochemical Society Meeting, (Oct. 2-7, 2016, Honolulu, Hawaii).
[10]S. Sekizaki, M. Osada, K. Nagashio, "Field Effect Transistor of Thin Anatase Obtained through Solid-State Transformation of Ti_0.87O₂ Nanosheet", International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2016, Tsukuba International Congress Center).
[9]Y. Hattori, T. Taniguchi, K. Watanabe, K. Nagashio,”Measurement of Anisotropic Dielectric Strength of Hexagonal Boron Nitride”, International Conference on Solid State Devices and Materials (SSDM), (September. 27, 2016, Tsukuba International Congress Center).
[8]T. Uwanno, T. Taniguchi, K.Watanabe, K. Nagashio, "Improvement of I_on/I_off for Bilayer Graphene by Encapsulation with h-BN", International Conference on Solid State Devices and Materials (SSDM), (September. 27, 2016, Tsukuba International Congress Center).
[7] Y. Hattori, T. Taniguchi, K. Watanabe, K. Nagashio, “Dielectric breakdown of layered insulator”, 43rd International Symposium on Compound semiconductors (ISCS), (June 26-30, 2016, Toyama int. Conf. Center, Toyama).
[6] K. Nagashio, “Gap state analysis and reliability study on 2D electronics”, Core to core program, (July, 18-19, 2016, Cambridge university, UK).
[5] [Invited] K. Nagashio, "Gap engineering & reliability study for 2D electronics", Graphene week (June 13-17, 2016, Warsaw, Poland).
[4] [Invited] K. Nagashio, "Dielectric breakdown of hexagonal Boron Nitride", International conference on graphene and related materials: properties and applications, (May 23-27, 2016, Paestum, Italy).
[3]Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic Dielectric Breakdown of Hexagonal Boron Nitride Film”, APS March meeting 2016, (March 14, 2016, Baltimore).
[2]K. Nagashio, “Dielectric Breakdown of Hexagonal Boron Nitride”, Nano Carbon Workshop, (Feb. 19, 2016, Advanced Technology Institute, Tokyo).
[1]K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal Boron Nitride”, SNU-UTokyo Workshop on Advanced Materials Science and Engineering, (Feb. 1, 2016, Tokyo univ. Tokyo).

2015
[12] [Invited] K. Nagashio, "Graphene field effect transistors", UTokyo-NTU joint conference at UTokyo 2015, (Dec. 9, 2015, Tokyo univ, Tokyo).
[11][Invited] K. Nagashio, "Graphene field effect transistor application", 1st Japan-EU workshop on graphene and related 2D materials, (Nov. 2, 2015, Sapia tower, Tokyo).
[10]N. Fang, K. Nagashio and A. Toriumi, "Direct Evidence of Defect-defect Correlation in Atomically Thin MoS₂ Layer by Random Telegraphic Signals Observed in Back-gated FETs", 2015 International Conference on Solid State Devices and Materials(SSDM), (Sep. 29, 2015, Sapporo, Hokkaido).
[9]T. Uwanno, K. Watanabe, T. Taniguchi and K. Nagashio, “PMMA Dry Transfer of Graphene on h-BN using Heating/Cooling System”, 2015 International Conference on Solid State Devices and Materials(SSDM), (Sep. 29, 2015, Sapporo, Hokkaido).
[8]S. Kurabayashi and K. Nagashio, "Tolerance to UV-O₃ Exposure of CVD and Mechanically Exfoliated MoS₂ & Fabrication of Top-Gated CVD MoS₂ FETs", 2015 International Conference on Solid State Devices and Materials(SSDM), (Sep. 28, 2015, Sapporo, Hokkaido).
[7] [Invited] K. Nagashio, "Layer-by-layer dielectric breakdown of hexagonal Boron Nitride", 11th Topical workshop on Heterostructure Microelectronics, (August 26, 2015, Hida Hotel Plaza, Takayama).
[6] [Invited] K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal Boron Nitride”, NanoCarbon workshop of PKU-UTokyo, (July 21, 2015, Tokyo univ., Tokyo).
[5]Y. Hattori, T. Taniguchi, K. Watanabe, & K. Nagashio, “Anisotropic Dielectric Breakdown of Hexagonal Boron Nitride Film”, International Conference on the Science and Application of Nanotubes（NT15), (June 29, 2015, Nagoya, Aichi, Japan).
[4]K. Nagashio, "Bilayer graphene field-effect transistors", International Conference on the Science and Application of Nanotubes（NT15), (June 28, 2015, Nagoya, Aichi, Japan).
[3] [Invited] K. Nagashio, "Bilayer graphene field-effect transistors", US/Japan 2D Materials Workshop, (March, 23, 2015, Tokyo Institute of Technology, Tokyo).
[2]K. Kanayama, and K. Nagashio, “Energy gap formation and gap states analysis in bilayer graphene”, APS March meeting 2015, (March 5, 2015, SanAntonio).
[1]Y. Hattori, T. Taniguchi, K. Watanabe, & K. Nagashio, "Layer-by-layer Dielectric Breakdown of Hexagonal Boron Nitride Film in Conductive AFM Measurement", APS March meeting 2015, (March 4, 2015, SanAntonio).

2014
[9][Invited] K. Nagashio, "Carrier response in electric-field-induced bandgap of bilayer graphene", 45th IEEE Semiconductor Interface Specialists Conference, (December 2014,Bahia Resort Hotel, SaDiego).
[8] [Invited] K. Nagashio, "Energy gap formation & gap states analysis in bilayer graphene", Indo-Japan program on Graphene and related materials, (November, 5, 2014, JNCASR, Bangalore, India).
[7] [Invited] K. Nagashio, "Energy gap formation and gap states analysis in bilayer graphene under the ultra-high displacement", Japan-Korea Joint Symposium on Semiconductor,Physics and Technology, (September 17, 2014, Sapporo).
[6]N. Fang, K. Nagashio, and A. Toriumi, "Subthreshold transport in mono- and multi-layered MoS2 FETs", 2014 International conference on solid state devices and materials (SSDM), (Sep. 11, 2014, Tsukuba International Congress Center, Ibaraki).
[5]N,Takahashi, K. Watanabe, T. Taniguchi, and K. Nagashio, "Direct deposition of high-k Y2O3 on h-BN by atomic layer deposition", 2014 International conference onsolid state devices and materials (SSDM), (Sep. 10, 2014, Tsukuba International Congress Center, Ibaraki).
[4] [Invited] K. Nagashio, "semiconducting properties in bilayer graphene under the ultara-high displacement", IEEE INEC2014, (July, Sapporo).
[3] [Invited] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, "Quantum capacitance measurement of bilayer graphene", 225rd ECS meeting, (May 12, 2014, Orlando).
[2] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, "Electrical quality improvement of thin Y2O3 topgates in graphene FETs by high-pressure O2 post-deposition annealing", APS March meeting 2014, (March 6, 2014, Colorado).
[1] K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi, "’Direct observation of asymmetric band structure of bilayer graphene through quantum capacitance measurements", APS March meeting 2014, (March 3, 2014, Colorado).

2013
[13] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, "Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displancement", 2013 IEEE International Electron Device Meeting (IEDM2013), pp.503-506, (Dec. 10, 2013, Washington DC).
[12] [Invited] K. Nagashio, "Metal/graphene contact", 4th A3 symposium on Emerging materials, (Nov. 12, 2013, Jeju, Korea).
[11] K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi, “Asymmetry of conduction and valence bands in bilayer graphene estimated by the quantum capacitance measurement”, 2013 International conference on solid state devices and materials (SSDM), (Sep. 27, 2013, Hilton Fukuoka Sea Hawk Fukuoka).
[10] J. L. Qi, K. Nagashio, W. Liu, T. Nishimura, and A. Toriumi, “Epitaxial CVD graphene growth on Cu/mica for gate stack research”, 2013 International conference on solid state devices and materials (SSDM), (Sep. 27, 2013, Hilton Fukuoka Sea Hawk, Fukuoka).
[9] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, “Quantum capacitance measurements in monolayer and bilayer graphene”, 2013 JSAP-MRS joint symposia, (Sep. 19, 2013, Kyotanabe campus, Doshisha Univ., Kyoto).
[8] K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi, “Asymmetric upper sub-band structure in conduction and valence bands for bilayer graphene elucidated by quantum capacitance measurement”, RPGR2013, (Sep. 12, 2013, Tokyo Tech Front, Tokyo).
[7] K. Nagashio, R. Ifuku, T. Nishimura, and A. Toriumi, “DOS estimation of graphene in the contact structure by qunatum capacitance measurement”, PRGR2013, (Sep. 12, 2013, Tokyo Tech Front, Tokyo).
[6] A. Toriumi, T. Moriyama, R. Ifuku, and K. Nagashio, "Graphene in contact with metals", E-MRS 2013 Spring meeting, (May 30, 2013, Strasbourg, France).
[5] K. Nagashio, R. Ifuku, T. Nishimura, and A. Toriumi, “Estimation of DOS in graphene in contact with metals by quantum capacitance measurement”, The 40th int. symp. on compound semiconductors, (May 22, 2013, Kobe convention center, Hyogo).
[4] [Invited] A. Toriumi, K. Nagashio, T. Moriyama, R. Ifuku, "Graphene underneath metals", 223rd ECS meeting, (May 15, 2013, Toronto).
[3] K. Nagashio, T. Nishimura, and A Toriumi, “Band gap estimation in bilayer grpahene through quantum capacitance measurement”, APS March meeting 2013, (March 18, 2013, Baltimore).
[2] R. Ifuku, K. Nagashio, T. Nishimura, and A. Torimi, “Resist-free graphene/metal interaction extracted through quantum capacitance measurement”, APS March meeting 2013, (March 18, 2013, Baltimore).
[1] K. Nagashio, and A. Toriumi, “Extraction of quantum capacitance in monolayer graphene”, ISPlasma 2013, (Jan. 29, 2013, Nagoya univ., Aichi).

2012
[5] [Invited] K. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, and A. Toriumi, "Intrinsic graphene/metal contact", 2012 IEEE International Electron Device Meeting (IEDM2012), pp.68-71, (Dec. 10, 2012, San Francisco).
[4] K. Nagashio, T. Nishimura and A. Toriumi, “Top-gated graphene FET with Y2O3 for quantum capacitance estimation”, 2012 International Conference on Solid State Devices and Materials(SSDM), pp.678-679.,(Sep.26, 2012, Kyoto)
[3] T. Moriyama, K. Nagashio, T. Nishimura and A. Toriumi, “Bias Dependent G-band Shift of Graphene in Direct Contacting with Ni”, 2012 International Conference on Solid State Devices and Materials(SSDM), pp.438-439.,(Sep.26, 2012, Kyoto)
[2] R. Ifuku, K. Nagashio, T. Nishimura and A. Toriumi, “Estimation of Metal-graphene Interaction Strength Through Quantum Capacitance Extraction of Graphene in Contact with Metal”, 2012 International Conference on Solid State Devices and Materials(SSDM), pp.446-447.,(Sep.26, 2012, Kyoto)
[1] T.Moriyama, K.Nagashio, T. Nishimura, and A. Toriumi, "Electrical transport properties of graphene in contact with Ni" 2012 MRS Spring Meeting, (Apr. 10, 2012, San Francisco)

2011
[8]Nagashio, T. Moriyama, R. Ifuku, T. Yamashita, T. Nishimura, and A. Toriumi,"Is Graphene Contacting with Metal Still Graphene?",2011 IEEE International Electron Device Meeting (IEDM2011), pp.27-30,(Dec. 5, 2011, Washington DC).
[7] [Invited] A. Toriumi and K.Nagashio,"Material Characterization of Graphene", 28th Annual Advanced Metallization Conference 2011,(Oct.4, 2011, San Diego).
[6]R. Ifuku, K. Nagashio, T. Nishimura and A. Toriumi,"Effects of Randomly Distributed Local Dirac Points in Graphene Channel on Its FET Transfer Characteristics",2011 International Conference on Solid State Devices and Materials (SSDM), pp1284-1285.(Sep.30, 2011, Nagoya).
[5]T. Moriyama, K. Nagashio, T. Nishimura and A. Toriumi,"Electrical Conductance in Graphene Contacting with Metal",2011 International Conference on Solid State Devices and Materials (SSDM), pp1288-1289.(Sep.30, 2011, Nagoya).
[4] [Invited] K. Nagashio and A. Toriumi,"Graphene/metal contact for graphene FET",Advanced Metallization Conference 2011 (ADMETA 2011), (Sep.15, 2011, Tokyo, Shibaura tech.).
[3] [Invited] K. Nagashio,"Graphene devices: from experimental viewpoints"(Short course),Third international conf. on Microelectronics and Plasma Technology,(Jul. 4, 2011, Dalian).
[2]K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi,"Transport properties of graphene on SiO2 with specific surface structures",2011 MRS Spring Meeting, (Apr. 27 ,2011, San Francisco).
[1]T. Yamashita, K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,"A Strong Interaction of Exfoliated Graphene with SiO2/Si Substrate",2011 International Workshop on Dielectric Thin Film for Future Electron Devices (IWDTF2011),pp. 19-20. (Jan.20, 2011, Tokyo).

2010
[4]K. Nagashio, T. Yamashita, J. Fujita, T. Nishimura, K. Kita and A. Toriumi, “Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films”,2010IEEE International Electron Device Meeting(IEDM2010), pp.564-567.(Dec. 7, 2010, San Francisco).
[3]T. Yamashita, J. Fujita, K. Nagashio, T. Nishimura, K. Kita and A. Toriumi, "Impact of Surface Treatment of SiO2/Si Substrate on Mechanically Exfoliated Graphene", 2010 International Conference on Solid State Devices and Materials(SSDM), pp896-897.(Sep.23, 2010, Tokyo).
[2] [Invited] K. Nagashio, T. Nishimura, K. Kita and A. Toriumi, "DOS Bottleneck for Contact Resistance in Graphene FETs",2010 International Conference on Solid State Devices and Materials(SSDM), pp884-885.(Sep.23, Tokyo, 2010).
[1]K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Current crowding at metal contacts in graphene FETs",2010 MRS Spring Meeting, (Apr. 7 ,2010, San Francisco).

2009
[3]K. Nagashio, T. Nishimura, K. Kita and A. Toriumi,"Metal dependent contact properties in graphene FETs",40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)（Dec. 2009, Arlington).
[2]K. Nagashio, T. Nishimura, K. Kita and A. Toriumi,"Metal/Graphene Contact as a Performance Killer of Ultra-high Mobility Graphene – Analysis of IntrinsicMobility and Contact Resistance -",2009IEEE International Electron Device Meeting(IEDM),pp.565-568.(Dec.2009,Baltimore).
[1]K. Nagashio, T. Nishimura, K. Kita and A. Toriumi,"Study of metal/graphene contact with different electrode geometry",Int. conf. on Solid State Devices and Materials, (Oct. 2009,Sendai).

2008
[1]K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi," Temperature dependent transport in mono- and multi-layer graphene films",Int. symp. on Graphene Devices, (Nov.2008, Aizu-Wakamatsu).
[2]K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,"Optical identification and electrical characterization of graphene transferred from natural graphite on thinner (90nm-thick) SiO2.",Extended Abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM), pp.316-317 (Sep. 2008, Tsukuba).