Publications |

2024
[6]Ryo Nanae, Satsuki Kitamura, Yih-Ren Chang, Kaito Kanahashi, Tomonori Nishimura, Redhwan Moqbel, Kung-Hsuan Lin, Mina Maruyama, Yanlin Gao, Susumu Okada, Kai Qi, Jui-Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio*, "Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain", Adv. Funct. Mater., 2024, 2406140.
https://doi.org/10.1002/adfm.202406140
[5]Shota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata*, "Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate", Appl. Phys. lett., 2024, 124, 263101.
https://doi.org/10.1063/5.0209432
[4]Redhwan Moqbel, Ryo Nanae, Satsuki Kitamura, Ming-Hao Lee, Yann-Wen Lan, Chi-Cheng Lee, Kosuke Nagashio, Kung-Hsuan Lin, "Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking", Adv. Optical Mater., 2024, 2400355.
https://doi.org/10.1002/adom.202400355
[3]N. Fang, Y. R. Chang, S. Fujii, D. Yamashita, M. Maruyama, Y. Gao, C. F. Fong, D. Kozawa, K. Otsuka, K. Nagashio, S. Okada, and Y. K. Kato, "Room-temperature quantum emission from interface excitons in 2 mixed-dimensional heterostructures", Nature commun., 2024, 15, 2871.
https://doi.org/10.48550/arXiv.2307.15399
[2]Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Single-gate MoS₂ Tunnel FET with thickness-modulated homojunction", ACS appl. mater. interfaces, 2024, 16, 8993-9001.
https://doi.org/10.1021/acsami.3c15535
[1]Ryuichi Nakajima, Tomonori Nishimura, Kaito Kanahashi, Keiji Ueno, and Kosuke Nagashio, "Work function modulation of Bi/Au bilayer system toward p-type WSe₂ FET" ACS appl. electronic mater., 2024 6(1), 144–149.
https://doi.org/10.1021/acsaelm.3c01091

2023
[8]N. Fang, Y. R. Chang, D. Yamashita, S. Fujii, M. Maruyama, Y. Gao, C. F. Fong, K. Otsuka, K. Nagashio, S. Okada & Y. K. Kato, "Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes", Nature Commun., 2023, 14, 8152.
https://doi.org/10.1038/s41467-023-43928-2
[7]Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Haonan Wang, Yubei Xiang, Keisuke Shinokita, Kazunari Matsuda, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Shift current photovoltaics based on a noncentrosymmetric phase in in-plane ferroelectric SnS", Adv. Mater., 2023, 35, 2301172.
https://doi.org/10.1002/adma.202301172
[6]Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Edward Chen, Kosuke Nagashio, "p-type conversion of WS₂ and WSe₂ by position-selective oxidation doping and its application in top gate transistors", ACS appl. mater. interfaces, 2023, 15(22), 26977-26984.
https://doi.org/10.1021/acsami.3c04052
[5]Supawan Ngamprapawat, Jimpei Kawase, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, and Kosuke Nagashio, " From h-BN to graphene: characterizations of hybrid carbon-doped h-BN for applications in electronic and optoelectronic devices", Adv. Electronic Mater., 2023, 2300083.
https://doi.org/10.1002/aelm.202300083
[4]Hiroto Ogura, Seiya Kawasaki, Zheng Liu, Takahiko Endo, Mina Maruyama,Yanlin Gao, Yusuke Nakanishi, Hong En Lim, Kazuhiro Yanagi, Toshifumi Irisawa, Keiji Ueno, Susumu Okada, Kosuke Nagashio, Yasumitsu Miyata, "Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics", ACS nano, 2023, 17, 7, 6545-6554.
https://doi.org/10.1021/acsnano.2c11927
[3]Shuhong Li, Tomonori Nishimura, Mina Maruyama, Susumu Okada and Kosuke Nagashio, "Experimental verification of SO₂ and S desorption contributing to defect formation in MoS₂ by thermal desorption spectroscopy", Nanoscale Adv., 2023, 5, 405-411.
https://doi.org/10.1039/D2NA00636G
[2]Haruki Uchiyama, Kohei Maruyama, Edward Chen, Tomonori Nishimura, Kosuke Nagashio, "A Monolayer MoS₂ FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er₂O₃ Insulator Through Thermal Evaporation", Small, 2023, 19, 2207394.
https://doi.org/10.1002/smll.202207394
[1]Redhwan Moqbel, Yih-Ren Chang, Zi-Yi Li, Sheng-Hsun Kung, Hao-Yu Cheng, Chi-Cheng Lee, Kosuke Nagashio, Kung-Hsuan Lin, "Wavelength Dependence of Polarization-resolved Second Harmonic Generation from Ferroelectric SnS Few Layers", 2D mater. 2023, 10, 015022.
DOI:10.1088/2053-1583/acab74

2022
[7]Wataru Nishiyama, Tomonori Nishimura, Masao Nishioka, Keiji Ueno, Satoshi Iwamoto, and Kosuke Nagashio, "Is the Band Gap of Bulk PdSe₂ Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy-", Adv. Photonics Res., 2022, 3, 2200231.
https://doi.org/10.1002/adpr.202200231
[6]N. Fang, D. Yamashita, S. Fujii, K. Otsuka, T. Taniguchi, K. Watanabe, K. Nagashio, and Y. K. Kato, "Quantization of cavity mode shifts induced by atomically thin materials", Adv. Opt. Mater., 2022, 2200538.
https://doi.org/10.1002/adom.202200538.
[5]Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe,Takashi Taniguchi, Kosuke Nagashio, "Current Injection into Single-crystalline Carbon-doped h-BN toward Electronic and Optoelectronic Applications", ACS Appl. Mater. Interfaces., 2022, 14, 22, 25731–25740.
https://doi.org/10.1021/acsami.2c04544
[4]Taro Sasaki, Keiji Ueno, Takashi Taniguchi,Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN", ACS Appl. Mater. Interfaces., 2022, 14, 22, 25659–25669.
https://doi.org/10.1021/acsami.2c03198
[3]Yih-Ren Chang, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe,Kosuke Nagashio, "Performance enhancement of SnS/h-BN Heterostructure p-type FET via Thermodynamically Predicted Surface Oxide Conversion Method", ACS appl. mater. interfaces., 2022, 14, 17, 19928–19937.
https://doi.org/10.1021/acsami.2c05534
[2]Wataru Nishiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio, "Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe₂ from Electrical Transport Properties", Adv. Funct. Mater., 2022, 32, 2108061.
https://doi.org/10.1002/adfm.202108061
[1]H. Ago, S. Okada, Y. Miyata, K. Matsuda, M. Koshino, K. Ueno, K. Nagashio, "Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation", Sci. Technol. Adv. Mater., 2022, 23, 275-299.
https://doi.org/10.1080/14686996.2022.2062576

2021
[7][Spotlights]Masaya Umeda, Naoki Higashitarumizu, Ryo Kitaura, Tomonori Nishimura, Kosuke Nagashio, "Identification of the position of piezoelectric polarization at the MoS₂/metal interface", Appl. Phys. Express, 2021, 14, 125002.
https://doi.org/10.35848/1882-0786/ac3d1f
[6][SiLight]I. Yonemori, S. Dutta, K. Nagashio, K. Wakabayashi, "Thickness-dependent Raman active modes of SnS thin films", AIP adv., 2021, 11, 095106.
https://doi.org/10.1063/5.0062857
[SiLight] https://aip.scitation.org/doi/10.1063/10.0006371
[5] Y.-R. Chang, T. Nishimura, K. Nagashio, "Thermodynamic perspective on the oxidation of layered materials and surface oxide amelioration in 2D devices", ACS appl. mater. interfaces, 2021, 13, 43282−43289.
DOI:10.1021/acsami.1c13279
[4]Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio, "Intrinsic Electronic Transport Properties and Carrier Densities in PtS₂ and SnSe₂: Exploration of n⁺-Source for 2D Tunnel FETs", Adv. Electronic Mater., 2021, 7, 2100292.
https://doi.org/10.1002/aelm.202100292
[3]T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, K. Nagashio, "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory", ACS nano, 2021, 15, 6658.
DOI: https://doi.org/10.1021/acsnano.0c10005
[2]Tomonori Nishimura, Toshiya Kojima, Kosuke Nagashio, Masaaki Niwa, “Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature”, Jpn. J. Appl. Phys., 2021, 60, SBBF03.
[1]Yih-Ren Chang, Naoki Higashitarumizu, Hayami Kawamoto, Fu-Hsien Chu, Chien-Ju Lee, Tomonori Nishimura, Rong Xiang, Wen-Hao Chang, Shigeo Maruyama, Kosuke Nagashio, "Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of SnS", Chem. Mater. 2021, 33, 1, 186–194.
DOI:10.1021/acs.chemmater.0c03184

2020
[10]H. Kawamoto, N. Higashitarumizu, N. Nagamura, M. Nakamura, K. Shimamura, N. Ohashi, and K. Nagashio, "Micrometer-scale monolayer SnS growth by physicalvapor deposition", nanoscale, 2020, 12, 23274.
DOI: 10.1039/d0nr06022d
[9]M. Maruyama, K. Nagashio, and S. Okada, "Carrier Distribution Control in van der Waals Heterostructures of MoS₂ and WS₂ by Field-Induced Band-Edge Engineering", Phys. Rev. Applied, 2020, 14, 044028.
DOI:10.1103/PhysRevApplied.14.044028
[8]K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio, "All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality",
ACS Applied Materials & Interfaces, 2020, 12, 51598−51606.
https://dx.doi.org/10.1021/acsami.0c13233
[7]T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio, "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage", Small, 2020, 16, 2004907.2020.
https://doi.org/10.1002/smll.202004907
[6][Invited review] Kosuke Nagashio, "Understanding interface properties in 2D heterostructure FETs", Semicond. Sci. Technol., 2020, 35, 103003.
https://doi.org/10.1088/1361-6641/aba287
[5]N. Fang, K. Otsuka, A. Ishii,T. Taniguchi, K. Watanabe, K. Nagashio, Y. Kato, "Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics", ACS Photonics, 2020, 7, 7, 1773.
DOI:10.1021/acsphotonics.0c00406
[4]P. Solís-Fernández, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Li, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, and H. Ago, "Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene", ACS Nano, 2020, 14, 6834−6844.
DOI:10.1021/acsnano.0c00645.
[3] N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B. -H. Lin, F. -H. Chu, I. Yonemori, T.i Nishimura, K. Wakabayashi, W. -H. Chang & K. Nagashio, "Purely in-plane ferroelectricity in monolayer SnS at room temperature", Nature commun.,2020, 11, 2428.
DOI:10.1038/s41467-020-16291-9
[2] M. Maruyama, K. Nagashio, S. Okada, "Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS₂", ACS appl.Electron. Mater., 2020, 2, 1352.
DOI:10.1021/acsaelm.0c00139
[1] N. Fang and K. Nagashio, "Quantum-mechanical effect in atomically thin MoS₂ FET", 2D mater, 2020, 7, 014001.
DOI: 10.1088/2053-1583/ab42c0

2019
[7]W. Li, J. Zhou, S. Cai, Z. Yu, J. Zhang, N. Fang, T. Li, Y. Wu, T. Chen, X. Xie, H. Ma, K. Yan, N. Dai, X. Wu, H. Zhao, Z. Wang, D. He, L. Pan, Y. Shi, P. Wang, W. Chen, K. Nagashio, X. Duan, and X. Wang, "Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices", Nature Electronics, 2019, 2, 563–571. DOI: 10.1038/s41928-019-0334-y
[6]T. Nishimura, X. Luo, S. Matsumoto, T. Yajima, and A. Toriumi, “Almost pinning-free bismuth/Ge and /Si interfaces”, AIP Advances 2019, 9, 095013. DOI: 10.1063/1.5115535
[5]N. Fang, S. Toyoda, T. Taniguchi, K. Watanabe, and K. Nagashio, "Full energy spectra of interface state densities for n– and p-type MoS₂ field-effect transistors", Adv. Func. Mater. 2019, 1904465. DOI: 10.1002/adfm.201904465
[4]N. Nagamura, H. Fukidome, K. Nagashio, K. Horiba, T. Ide, K. Funakubo, K. Tashima, A. Toriumi, M. Suemitsu, K. Horn, M. Oshima, "Influence of interface dipole layers on the performance of graphene field effect transistors", Carbon, 2019, 152, 680-687. DOI: 10.1016/j.carbon.2019.06.038
[3]E. Asakura, M. Suzuki, S. Karube, J. Nitta, K. Nagashio and M. Kohda, "Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS₂", Appl. Phys. Express, 2019, 12, 063005.(DOI: 10.7567/1882-0786/ab21a8)
[2] S. Toyoda, T. Uwanno, T. Taniguchi, K. Watanabe, and K. Nagashio, "Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes", Appl. Phys. Express, 2019, 12, 055008. DOI: 10.7567/1882-0786/ab176b
[1]R. Matsuoka, R. Toyoda, R. Shiotsuki, N. Fukui, K. Wada, H. Maeda, R. Sakamoto, S. Sasaki, H. Masunaga, K. Nagashio, and H. Nishihara, "Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue", ACS appl. mater. interfaces, 2019, 11, 3, 2730-2733, DOI: 10.1021/acsami.8b00743

2018
[11]N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, and K. Nagashio, "Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation", Nanoscale, 2018, 10, 22474 – 22483, DOI: 10.1039/C8NR06390G
[10] K. Taniguchi, N. Fang, and K. Nagashio, "Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS₂ FET”, Appl. Phys. Lett. 2018, 113, 133505, https://doi.org/10.1063/1.5048099
[9] N. Fang, and K. Nagashio, "Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule", ACS appl. mater. interfaces, 2018, 10, 32355-32364, DOI: 10.1021/acsami.8b10687
[8]T. Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio, "Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs", ACS appl. mater. interfaces, 2018, 10, 28780-28788. DOI: 10.1021/acsami.8b08959
[7]J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio, "2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source", Adv. Electronic Mater. 2018, 4, 1800207, https://doi.org/10.1002/aelm.201800207
[6]S. Netsu, T. Kanazawa, T. Uwanno, T. Amemiya, K. Nagashio, Y. Miyamoto, "Type-II HfS₂/MoS₂ heterojunction transistors", IEICE Trans. Electron., 2018, E101-C, 338-342, DOI: 10.1587/transele.E101.C.338
[5]N. Higashitarumizu, H. Kawamoto, K. Ueno and K. Nagashio, "Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application", MRS Advances, 2018, 3, 2809-2814. https://doi.org/10.1557/adv.2018.404
[4]Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface", ACS appl. mater. interfaces, 2018, 10, 11732, DOI: 10.1021/acsami.7b18454
[3] N. Fang, K. Nagashio, "Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor", J. Phys. D, 2018, 51, 065110, https://doi.org/10.1088/1361-6463/aaa58c
[2] Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement", Phys. Rev. B, 2018, 97, 045425, DOI:https://doi.org/10.1103/PhysRevB.97.045425
[1] H. G. Ji, Y.-C. Lin, K. Nagashio, M. Maruyama, P. Solís Fernández, A. Sukma Aji, V. Pancahl, S. Okada, K. Suenaga, H. Ago, "Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching" Chem. Mater, 2018, 30, 403-411, DOI: 10.1021/acs.chemmater.7b04149

2017
[6]S. Kurabayashi, and K. Nagashio, ”Transport properties of the top and bottom surfaces in monolayer MoS₂ grown by chemical vapor deposition”, Nanoscale, 2017, 9, 13264-13271, DOI:10.1039/C7NR05385A
[5]K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao, W. Norimatsu, and M. Kusunoki, Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator, ECS Transactions, 2017, 79, 91-97, DOI:10.1149/07901.0091ecst
[4] S. Sekizaki, M. Osada, and K. Nagashio, "Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets", Nanoscale, 2017, 9, 6471–6477, DOI:10.1039/C7NR01305A
[3]R. Matsuoka, R. Sakamoto, K. Hoshiko, S. Sasaki, H. Masunaga, K. Nagashio, and H. Nishihara, "Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface", J. Am. Chem. Soc., 2017, 139, 3145, DOI:10.1021/jacs.6b12776
[2]N. Fang, K. Nagashio, and A. Toriumi, "Experimental detection of active defects in few layers MoS₂ through random telegraphic signals analysis observed in its FET characteristics", 2D mater., 2017, 4, 015035, DOI:10.1088/2053-1583/aa50c4
[1] [Review] K. Nagashio, "Graphene field-effect transistor application -Electric band structure of graphene in transistor structure extracted from quantum capacitance-", J. Mater. Res., 2017, 32, 64, DOI:10.1557/jmr.2016.366

2016
[3]Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride", Appl. Phys. Lett. 2016, 109, 235111.
[2]N. Takahashi, and K. Nagashio, "Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition", Appl. Phys. Express, 2016, 9, 125101.
[1] Y. Hattori, T. Taniguchi, K. Watanabe, and K. Naashio, "Anisotropic breakdown strength of single crystal hexagonal Boron Nitride", ACS appl. mater. interfaces, 2016, 8, 27877.

Book
[1] A. Toriumi, K. Nagashio, "Metal contacts to Graphene" in 2D materials for nanoelectronics, edited by M.Houssa, A. Dimoulas, A. Molle, CRC Press, 2016, pp.53-78. [review].

2015
[5]T. Uwanno, Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio, "Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system", 2D mater. 2015, 2, 041002. [selected as highlights of 2015]
[4]K. Kanayama, and K. Nagashio, "Gap state analysis in electric-field-induced band gap for bilayer graphene", Sic. Rep. 2015, 5, 15789.
[3]N. Fang, K. Nagashio, and A. Toriumi, "Subthreshold transport in mono-and multilayered MoS₂FETs", Appl. Phys. Express, 2015, 8, 065203.
[2] N. Takahashi, T. Taniguchi, K. Watanabe, K. Nagashioi, "Atomic layer deposition of Y₂O₃ on h-BN for a gate stack in graphene FETs", Nanotechnology, 2015, 26, 175708.
[1] Y. Hattori, K. Watanabe, T. Taniguchi, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride”, ACS nano, 2015, 9, 916.

Book
[1] K. Nagashio, A. Toriumi, "Graphene/metal contact" in Frontiers of graphene and carbon nanotubes, Springer, 2015, pp.53-78. [review].

2014
[5] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, “Quantum capacitance measurement of bilayer graphene”, ECS Trans. 2014, 61(3), 75.
[4] H. Fukidome, K. Nagashio, N. Nagamura, K. Tashima, K. Funakubo, K. Horiba, M. Suemitsu, A. Toriumi, and M. Oshima, “Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy”, Appl. Phys. Express 2014, 7, 065101.
[3] J. L. Qi, K. Nagashio, T. Nishimura, A. Toriumi, "Crystal orientation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica", Nanotechnology, 2014, 25, 185602.
[2] K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi, "Large Fermi level modulation in graphene transistors with high-pressure O₂-annealed Y₂O₃ topgate insulators", Appl. Phys. Lett. 2014, 104, 083519.
[1] H. Fukidome, M. Kotsugi, K. Nagashio, R. Sato, T. Ohkochi, T. Itoh, A. Toriumi, M. Suemitsu, T. Kinoshita, "Orbital-specific tunability of many-body effects in bilayer graphene by gate bias and metal contact", Sci. Rep. 2014, 4, 3713.2014.

2013
[5] R. Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi, "The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity", Appl. Phys. Lett. 2013, 103, 033514.
[4] T. Moriyama, K. Nagashio, T. Nishimura, and A. Toriumi, "Carrier density modulation in graphene underneath the Ni electrode", J. Appl. Phys. 2013, 114, 024503.
[3] N. Nagamura, K. Horiba, S. Toyoda, S. Kurosumi, T. Shinohara, M. Oshima, H. Fukidome, M. Suemitsu, K. Nagashio, A. Toriumi, "Direct observation of charge transfer region at interfaces in graphene device", Appl. Phys. Lett. 2013, 102, 241604.
[2] K. Nagashio, T. Nishimura, and A. Toriumi, "Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement", Appl. Phys. Lett. 2013, 102, 173507.
[1] K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi, "Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displancement", IEEE International Electron device meeting (IEDM) Tech. Dig. 2013, 503.

2012
[1] K. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, and A. Toriumi, "Intrinsic graphene/metal contact", IEEE International Electron device meeting (IEDM) Tech. Dig. 2012, 68.[invited]

2011
[3] K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electric transport properties of graphene on SiO₂ with specific surface structures", J. Appl. Phys. 2011, 110, 024513.
[2] K. Nagashio, and A. Toriumi, "Density of states limited contact resistance in graphene FETs", Jpn. J. Appl. Phys. 2011, 50, 070108.[review]
[1] K. Nagashio, T. Moriyama, R. Ifuku, T. Nishimura, and A. Toriumi, "Is graphene contacting with metal still graphene?", IEEE International Electron device meeting (IEDM) Tech. Dig. 2011, 27.

2010
[3] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Systematic investigation of intrinsic channel properteis and contact resistance on mono- and multi-layered graphene FET", Jpn. J. Appl. Phys. 2010, 49, 051304. [JSAP paper award]
[2] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Contact resistivity and current flow path at metal/graphene contact", Appl. Phys. Lett. 2010, 97, 143514.
[1] K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, "Impact of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exforiated graphene films", IEEE International Electron device meeting (IEDM) Tech. Dig. 2010, 564.

2009
[2] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Mobility variations in mono- and multi-layer graphene films", Appl. Phys. Express, 2009, 2, 025003.
[1] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Metal/graphene contact as a performance killer of ultra-high mobility graphene – analysis of intrinsic mobility and contact resistance -", IEEE International Electron device meeting (IEDM) Tech. Dig. 2009, 565.

Before joinning to Mater. Eng. in UT [selected]
[23] K. Nagashio, and K. Kuribayashi, "Chapter 8, Crystal growth of spherical Si" in Crystal growth of Si for solar cell, edited by K. Nakajima, and N. Usami, Springer, 2009, 121.
[22] K. Nagashio, K. Kodaira, K. Kuribayashi, and T. Motegi, "Spreading and solidfication of a highly undercooled Y₃Al₅O₁₂ droplet impinging on a substrate", Int. J. Heat Mas Trans., 2008, 51, 2455.
[21]K. Nozaki, K. Nagashio, and K. Kuribayashi, “Orientation analysis of hexagonal dendrite formed from undercooled melt of a-FeSi₂”, Metal. Mater. Trans. A, 2008, 39A, 135.
[20] K. Nagashio, K. Nozaki, K. Kuribayashi, and K. Katayama, "The dynamic process of dendrite fragementation in solidification from undercooled Si melt using time-resolved X-ray diffraction, Appl. Phys. Lett. 2007, 91, 061916.
[19] K. Nagashio, K. Kuribayashi, M. S. Vijaya Kumar, K. Niwata, T. Hibiya, A. Mizuno, M. Watanabe, Y. Katayama, "In-situ identification of the metastable phase during solidification from the undercooled YFeO₃ melt by fast X-ray diffractometry at 250 Hz", Appl. Phys. Lett, 2006, 89, 241923.
[18]K. Nagashio, M. Adachi, K. Higuchi, A. Mizuno, M. Watanabe, K. Kuribayashi, and Y. Katayama, “Real time X-ray observation of solidification from undercooled Si melt”, J. Appl. Phys., 2006, 100, 033524.
[17] K. Nagashio, and K. Kuribayashi, "Experimental verification of ribbon formation process in chill-block metl spinning", Acta mater. 2006, 54, 2353.
[16]L. Bai, C. Xu, N. C. Giles, K. Nagashio, and R. S. Feigelson, “Correlation of the electrical and optical properties of CdGeAs₂”, J. Appl. Phys., 2006, 99, 013512.
[15] K. Nagashio, H. Okamoto, H. Ando, K. Kuribayashi, and I. Jimbo, "Spherical Si crystal fromed by semisolid process in drop tube", Jpn. J. Appl. Phys. 2006, 45, L623.
[14]K. Nagashio, H. Okamoto, K. Kuribayashi, and I. Jimbo, “Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt”, Metall. Mater. Trans. A, 2005, 36A, 3407.
[13] K. Nagashio, and K. Kuribayashi, "Growth mechanism of twin-related and twin-free facet Si dendrites", Acta mater. 2005, 53, 3021.
[12]M. Li, K. Nagashio, T. Ishikawa, S. Yoda, and K. Kuribayashi, “Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts”, Acta mater., 2005, 53, 731.
[11]K. Nagashio, H. Murata, K. Kuribayashi, “Spreading and solidification behavior of molten Si droplets impinging on substrates”, Acta mater., 2004, 52, 5295.
[10]L. Bai, N. C. Giles, P. G. Schunemann, T. M. Pollak, K. Nagashio, and R. S. Feigelson, “Donor-Acceptor Pair Emission Near 0.55 eV in CdGeAs₂”, J. Appl. Phys., 2004, 95, 4840.
[9] K. Nagashio, A. Watcharapasorn, K. T. Zawilski, R. C. DeMattei, and R. S. Feigelson, L. Bai, N. Giles, L. Halliburton, P. G. Schunemann, "Correlation between dislocation etch pits and optical absorption in CdGeAs₂", J. Crystal Growth, 2004, 269, 195.
[8]K. Nagashio, A. Watcharapasorn, R. C. DeMattei, and R. S. Feigelson, “Fiber growth of near stoichiometric LiNbO₃ single crystal by laser heated pedestal growth method”, J. Crystal Growth, 2004, 265, 190.
[7]D. E. Gustafson, W. H. Hofmeister, R. J. Bayuzick, K. Nagashio, and K. Kuribayashi, “Formation of Y_xNd_1-xBa₂Cu₃O_7-d (0<x<0.9) superconductors from an undercooled melt via aero¯acoustic levitation”, Mater. Sci. Eng. A, 2003, 341, 1.
[6]N. Y. Garces, N. C. Giles, L. E. Halliburton, K. Nagashio, R. S. Feigelson, P. G. Schunemann, “Electron paramagnetic resonance of C^r2+and Cr⁴⁺ ions in CdGeAs₂crystals”, J. Appl. Phys., 2003, 94, 7567-70.
[5]M. Li, K. Nagashio, and K. Kuribayashi, “Reexamination of the solidification behavior of undercooled Ni-Sn eutectic melts”, Acta mater., 2002, 50, 3239.
[4]K. Nagashio, and K. Kuribayashi, “Phase selection in the undercooled peritectic Y₃Fe₅O₁₂melt”, Acta mater., 2002, 50, 1973.
[3] K. Nagashio, and K. Kuribayashi, "Metastable phase formation from an undercooled rare-earth orthoferrite melt", J. Am. Ceram. Soc. 2002, 85, 2550.
[2] K. Nagashio, and K. Kuribayashi, "Rapid solidification of Y₃Al₅O₁₂, garnet from hypercooled melt", Acta mater, 2001, 49, 1947.
[2] K. Nagashio, K. Kuribayashi, and Y. Takamura, "Phase selection of peritectic phase in undercooled Nd-based superconducting oxides", Acta mater. 2000, 48, 3049.
[1] K. Nagashio, Y. Takamura, K. Kuribayashi, and Y. Shiohara, “Microstructural control of NdBa₂Cu₃O_7-d superconducting oxide from highly undercooled melt by containerless processing”, J. Crystal Growth, 1999, 200, 118.