awards

Kioxia Excellent Research Award 2020, Device category Kosuke NAGASHIO
Material and Device Structure Designs for 2D Memory Devices

2021.9 SSDM Young Researcher award Taro Sasaki
Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "Understanding the Tunneling Behavior in 2D Based Floating Gate Type Memory Device by Measuring Floating Gate Voltage", International Conference on Solid State Devices and Materials (SSDM), (September. 30, 2020, All-VIRTUAL conference).

2020.9 SSDM Young Researcher award, Naoki Higashitarumizu
N. Higashitarumizu, H. Kawamoto, K. Nagashio, "Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications", International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).


2019.2 Dean’s award(Research), School of Engineering, UTokyo


2018.10 Electronic materials symposium, Naoki Higashitarumizu
(Oct. 12, 2018, Nagahama, Shiga)


2018.3 JSAP Young researcher award, Nan Fang
Nan Fang, Kosuke Nagashio, “Bandtailinterface states and quantum capacitance in monolayer MoS2 FET", 2017年第78回応用物理学会秋季学術講演会,(2017年9月7日, 福岡国際会議場(福岡県)). 



2016.9 SSDM Young Researcher award, Nan Fang
N. Fang, K. Nagashio, A. Toriumi, "Direct evidence of defect-defect correlation in atomically thin MoS2 layer by random telegraphic signals observed in back-gated FETs", 2015 International Conference on Solid State Devices and Materials(SSDM), (Sep. 29, 2015, Sapporo, Hokkaido).


2016.9 JSAP Young researcher award, Yoshiaki Hattori
服部吉晃, 谷口尚,渡邊賢司,長汐晃輔,「単結晶六方晶ボロンナイトライドの絶縁破壊強度の異方性」, 2016年第63回応用物理学会春季学術講演会,(2016年3月19日, 東京工業大学大岡山キャンパス(東京)).



2015.3 日本金属学会・日本鉄鋼協会奨学賞 ウワンノー ティーラユット


2013.9 JSAP Young researcher award, Ryota Ifuku

井福亮太, 森山喬史, 長汐晃輔, 西村知紀, 鳥海明,「レジストフリープロセスによるグラフェン電子デバイスの作製」, 2013年第60回応用物理学会春季学術講演会,(2013年3月29日, 神奈川工科大学(神奈川)).




2011.9 JSAP Paper award Kosuke Nagashio
K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Systematic investigation of intrinsic channel properteis and contact resistance on mono- and multi-layered graphene FET", Jpn. J. Appl. Phys. 2010, 49, 051304.